Studying the Structure and Lifetime of Photogenerated Current Carriers of Cadmium Telluride-Based Solid Solutions in CdTe–Sb2Te3 and CdTe–CdSb Systems

IF 0.9 4区化学 Q4 CHEMISTRY, PHYSICAL

High Energy Chemistry Pub Date : 2024-04-21 DOI:10.1134/s0018143924020048

M. V. Gapanovich, E. V. Rabenok, E. N. Koltsov, V. V. Rakitin, V. A. Gevorgyan, D. S. Lutsenko

{"title":"Studying the Structure and Lifetime of Photogenerated Current Carriers of Cadmium Telluride-Based Solid Solutions in CdTe–Sb2Te3 and CdTe–CdSb Systems","authors":"M. V. Gapanovich, E. V. Rabenok, E. N. Koltsov, V. V. Rakitin, V. A. Gevorgyan, D. S. Lutsenko","doi":"10.1134/s0018143924020048","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>The structure of CdTe–Sb2Te3 and CdTe–CdSb solid solutions (0–1019 Sb atoms cm–3) prepared by multistage solid-state synthesis from the elements has been studied. It has been found that the introduction of antimony Sb3+ and Sb3− into cadmium telluride leads to a decrease and increase in the unit cell volume, respectively. It has been shown that the crystal lattice parameters gradually change up to an antimony concentration of 1018 atoms cm–3 in both systems, whereas an increase in the antimony concentration above 1018 Sb atoms cm–3 is characterized by an abrupt change in the unit cell volume due to a significant change in the structure. The decay kinetics of current carriers has been studied by the time-resolved microwave photoconductivity method. It has been found that the introduction of antimony into CdTe in a threshold concentration (1018 Sb atoms cm–3) leads to an increase in the lifetime of photogenerated current carriers; this fact can be attributed to the formation of defect associates and the occurrence of a self-compensation process during doping.","PeriodicalId":12893,"journal":{"name":"High Energy Chemistry","volume":"67 1","pages":""},"PeriodicalIF":0.9000,"publicationDate":"2024-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"High Energy Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1134/s0018143924020048","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

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Abstract

The structure of CdTe–Sb₂Te₃ and CdTe–CdSb solid solutions (0–10¹⁹ Sb atoms cm^–3) prepared by multistage solid-state synthesis from the elements has been studied. It has been found that the introduction of antimony Sb³⁺ and Sb³⁻ into cadmium telluride leads to a decrease and increase in the unit cell volume, respectively. It has been shown that the crystal lattice parameters gradually change up to an antimony concentration of 10¹⁸ atoms cm^–3 in both systems, whereas an increase in the antimony concentration above 10¹⁸ Sb atoms cm^–3 is characterized by an abrupt change in the unit cell volume due to a significant change in the structure. The decay kinetics of current carriers has been studied by the time-resolved microwave photoconductivity method. It has been found that the introduction of antimony into CdTe in a threshold concentration (10¹⁸ Sb atoms cm^–3) leads to an increase in the lifetime of photogenerated current carriers; this fact can be attributed to the formation of defect associates and the occurrence of a self-compensation process during doping.

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研究 CdTe-Sb2Te3 和 CdTe-CdSb 系统中碲化镉固溶体光生载流子的结构和寿命

摘要研究了由元素多级固态合成制备的 CdTe-Sb2Te3 和 CdTe-CdSb 固溶体（0-1019 Sb 原子 cm-3）的结构。研究发现，在碲化镉中引入锑 Sb3+ 和 Sb3- 会分别导致单胞体积的减小和增大。研究表明，在锑浓度达到 1018 个原子 cm-3 的情况下，这两种体系的晶格参数会逐渐发生变化，而当锑浓度增加到 1018 个 Sb 原子 cm-3 以上时，由于结构发生了显著变化，单位晶胞体积会发生突变。通过时间分辨微波光导法研究了电流载流子的衰减动力学。研究发现，在镉碲中引入阈值浓度（1018 锑原子 cm-3）的锑会导致光生电流载流子的寿命延长；这一事实可归因于在掺杂过程中形成的缺陷联营体和发生的自我补偿过程。

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来源期刊

High Energy Chemistry 化学-物理化学

CiteScore

1.50

自引率

28.60%

发文量

审稿时长

6-12 weeks

期刊介绍： High Energy Chemistry publishes original articles, reviews, and short communications on molecular and supramolecular photochemistry, photobiology, radiation chemistry, plasma chemistry, chemistry of nanosized systems, chemistry of new atoms, processes and materials for optical information systems and other areas of high energy chemistry. It publishes theoretical and experimental studies in all areas of high energy chemistry, such as the interaction of high-energy particles with matter, the nature and reactivity of short-lived species induced by the action of particle and electromagnetic radiation or hot atoms on substances in their gaseous and condensed states, and chemical processes initiated in organic and inorganic systems by high-energy radiation.