{"title":"Germylene energetics: spectroscopic constants and bond dissociation energies of GeX, GeX−, GeX+, GeX2, GeX2− and GeX2+ (X = F, Cl, Br and I)","authors":"Sudeshna Ghosh, Tapas Kumar Ghosh","doi":"10.1007/s11224-024-02324-2","DOIUrl":null,"url":null,"abstract":"<div><p>Ab initio investigation of the spectroscopic constants, bond dissociation energies of germanium monohalides, germanium dihalides and their ionic systems, viz. GeX, GeX<sup>−</sup>, GeX<sup>+</sup>, GeX<sub>2</sub>, GeX<sub>2</sub><sup>−</sup> and GeX<sub>2</sub><sup>+</sup> (<i>X</i> = F, Cl, Br and I) have been carried out using correlation consistent triple-zeta basis sets for F and Cl and similar triple-zeta basis sets with RECPs for Ge, Br and I atoms. Geometry and frequency of all the neutral and ionic systems of germanium halides are obtained using MP2, CCSD(T) and QCISD(T) methods. The energetics are obtained at the CCSD(T)//MP2, QCISD(T)//MP2, CCSD(T) and QCISD(T) levels. Electron affinity (EA) and ionization potential (IP) of the monohalides and dihalides are reported to be consistent with the data available in literature. The bond dissociation energies (BDEs) to various dissociation asymptotes for most of the ionic systems are to be reported new in literature. The BDEs of the neutral germanium dihalides GeX<sub>2</sub> are calculated by using the BDEs of GeX<sub>2</sub><sup>−</sup> and GeX<sub>2</sub><sup>+</sup> ions and EA and IP of the associated neutral systems. A good agreement is found between the calculated values and the data wherever available. The BDEs of GeX<sub>2</sub> for higher halogen member are reported to be new in literature. The enthalpies of formation for atomization and ionization of the neutral GeX<sub>2</sub> dihalides are also reported here. The enthalpies of ionization are reported first time in literature and found consistent with other group IV dihalides. The reported molecular properties may be helpful to understand the chemistry involved in the plasma-assisted fabrication process of the Ge-based modern microelectronic devices, as well as will serve as a future reference.</p></div>","PeriodicalId":780,"journal":{"name":"Structural Chemistry","volume":"35 6","pages":"1777 - 1792"},"PeriodicalIF":2.1000,"publicationDate":"2024-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Structural Chemistry","FirstCategoryId":"92","ListUrlMain":"https://link.springer.com/article/10.1007/s11224-024-02324-2","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Ab initio investigation of the spectroscopic constants, bond dissociation energies of germanium monohalides, germanium dihalides and their ionic systems, viz. GeX, GeX−, GeX+, GeX2, GeX2− and GeX2+ (X = F, Cl, Br and I) have been carried out using correlation consistent triple-zeta basis sets for F and Cl and similar triple-zeta basis sets with RECPs for Ge, Br and I atoms. Geometry and frequency of all the neutral and ionic systems of germanium halides are obtained using MP2, CCSD(T) and QCISD(T) methods. The energetics are obtained at the CCSD(T)//MP2, QCISD(T)//MP2, CCSD(T) and QCISD(T) levels. Electron affinity (EA) and ionization potential (IP) of the monohalides and dihalides are reported to be consistent with the data available in literature. The bond dissociation energies (BDEs) to various dissociation asymptotes for most of the ionic systems are to be reported new in literature. The BDEs of the neutral germanium dihalides GeX2 are calculated by using the BDEs of GeX2− and GeX2+ ions and EA and IP of the associated neutral systems. A good agreement is found between the calculated values and the data wherever available. The BDEs of GeX2 for higher halogen member are reported to be new in literature. The enthalpies of formation for atomization and ionization of the neutral GeX2 dihalides are also reported here. The enthalpies of ionization are reported first time in literature and found consistent with other group IV dihalides. The reported molecular properties may be helpful to understand the chemistry involved in the plasma-assisted fabrication process of the Ge-based modern microelectronic devices, as well as will serve as a future reference.
期刊介绍:
Structural Chemistry is an international forum for the publication of peer-reviewed original research papers that cover the condensed and gaseous states of matter and involve numerous techniques for the determination of structure and energetics, their results, and the conclusions derived from these studies. The journal overcomes the unnatural separation in the current literature among the areas of structure determination, energetics, and applications, as well as builds a bridge to other chemical disciplines. Ist comprehensive coverage encompasses broad discussion of results, observation of relationships among various properties, and the description and application of structure and energy information in all domains of chemistry.
We welcome the broadest range of accounts of research in structural chemistry involving the discussion of methodologies and structures,experimental, theoretical, and computational, and their combinations. We encourage discussions of structural information collected for their chemicaland biological significance.