{"title":"Beta-Gallium Oxide Material and Device Technologies","authors":"Masataka Higashiwaki, Man Hoi Wong","doi":"10.1146/annurev-matsci-080921-104058","DOIUrl":null,"url":null,"abstract":"Beta-gallium oxide (β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) is a material with a history of research and development spanning about 70 years; however, it has attracted little attention as a semiconductor for a long time. The situation has changed completely in the last ten years, and the world has seen increasing demand for active research and development of both materials and devices. Many of its distinctive physical properties are attributed to its very large bandgap energy of 4.5 eV. Another important feature is that it is possible to grow large bulk single crystals by melt growth. In this article, we first discuss the physical properties of β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, which are mainly important for electronic device applications, bulk melt growth, and thin-film epitaxial growth technologies. Then, state-of-the-art β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> transistor and diode technologies are discussed.","PeriodicalId":8055,"journal":{"name":"Annual Review of Materials Research","volume":null,"pages":null},"PeriodicalIF":10.6000,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Annual Review of Materials Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1146/annurev-matsci-080921-104058","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Beta-gallium oxide (β-Ga2O3) is a material with a history of research and development spanning about 70 years; however, it has attracted little attention as a semiconductor for a long time. The situation has changed completely in the last ten years, and the world has seen increasing demand for active research and development of both materials and devices. Many of its distinctive physical properties are attributed to its very large bandgap energy of 4.5 eV. Another important feature is that it is possible to grow large bulk single crystals by melt growth. In this article, we first discuss the physical properties of β-Ga2O3, which are mainly important for electronic device applications, bulk melt growth, and thin-film epitaxial growth technologies. Then, state-of-the-art β-Ga2O3 transistor and diode technologies are discussed.
期刊介绍:
The Annual Review of Materials Research, published since 1971, is a journal that covers significant developments in the field of materials research. It includes original methodologies, materials phenomena, material systems, and special keynote topics. The current volume of the journal has been converted from gated to open access through Annual Reviews' Subscribe to Open program, with all articles published under a CC BY license. The journal defines its scope as encompassing significant developments in materials science, including methodologies for studying materials and materials phenomena. It is indexed and abstracted in various databases, such as Scopus, Science Citation Index Expanded, Civil Engineering Abstracts, INSPEC, and Academic Search, among others.