Ivan Vikulin, Lidiya Vikulina, Pavlo Markolenko, Oleksandr Nazarenko
{"title":"Thyristors Controlled by Light and Magnetic Field","authors":"Ivan Vikulin, Lidiya Vikulina, Pavlo Markolenko, Oleksandr Nazarenko","doi":"10.3103/s0735272723010053","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this paper an impact of external magnetic field on current-voltage characteristics of a planar silicon photothyristor is researched experimentally. It is shown that magnetic field of one polarity with induction of 0.4 T results in such decrease of the breakover voltage <i>U</i><sub><i>B</i></sub> as well as an LED emission at current of 8 mA. But magnetic field of the opposite polarity allows to increase <i>U</i><sub><i>B</i></sub>. There are represented the formulas for calculation of the dependence of <i>U</i><sub><i>B</i></sub> on magnetic field. Increase of magnetic sensitivity is achieved by placement of the area with high rate of injected charge carriers recombination at the opposite side of the electrodes at the base side. Double contactless control of the thyristor <i>U</i><sub><i>B</i></sub> with light and magnetic field allows to increase essentially its functional possibilities. Since the thyristor can only be turned on by light emission, it can also be turned off by the magnetic field impact. It is shown that existing industrial optical couplers can be used as optrons controlled with light emission and magnetic field, but magnetic control thyristor can be used as a simple switch.</p>","PeriodicalId":52470,"journal":{"name":"Radioelectronics and Communications Systems","volume":"52 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radioelectronics and Communications Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3103/s0735272723010053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper an impact of external magnetic field on current-voltage characteristics of a planar silicon photothyristor is researched experimentally. It is shown that magnetic field of one polarity with induction of 0.4 T results in such decrease of the breakover voltage UB as well as an LED emission at current of 8 mA. But magnetic field of the opposite polarity allows to increase UB. There are represented the formulas for calculation of the dependence of UB on magnetic field. Increase of magnetic sensitivity is achieved by placement of the area with high rate of injected charge carriers recombination at the opposite side of the electrodes at the base side. Double contactless control of the thyristor UB with light and magnetic field allows to increase essentially its functional possibilities. Since the thyristor can only be turned on by light emission, it can also be turned off by the magnetic field impact. It is shown that existing industrial optical couplers can be used as optrons controlled with light emission and magnetic field, but magnetic control thyristor can be used as a simple switch.
期刊介绍:
Radioelectronics and Communications Systems covers urgent theoretical problems of radio-engineering; results of research efforts, leading experience, which determines directions and development of scientific research in radio engineering and radio electronics; publishes materials of scientific conferences and meetings; information on scientific work in higher educational institutions; newsreel and bibliographic materials. Journal publishes articles in the following sections:Antenna-feeding and microwave devices;Vacuum and gas-discharge devices;Solid-state electronics and integral circuit engineering;Optical radar, communication and information processing systems;Use of computers for research and design of radio-electronic devices and systems;Quantum electronic devices;Design of radio-electronic devices;Radar and radio navigation;Radio engineering devices and systems;Radio engineering theory;Medical radioelectronics.