SEDONUT: A Single Event Double Node Upset Tolerant SRAM for Terrestrial Applications

Abstract

The radiation and its effect on neighboring nodes are critical not only for space applications but also for terrestrial applications at modern lower technology nodes. This may cause SRAM failures due to single and multi-node upset. Hence, this paper proposes a 14T radiation-hardened-based SRAM cell to overcome soft errors for space and critical terrestrial applications. Simulation results show that the proposed cell can be resilient to any single event upset and single event double node upset at its storage nodes. This cell uses less power than others. The hold, read, and write stability increases compared to most considered cells. The higher critical charge of the proposed SRAM increases radiation resistance. Simulation results demonstrate that out of all compared SRAMs, only DNUSRM and proposed SRAM show 0% probability of logical flipping. Also, the other parameters like total critical charge, write stability, read stability, hold stability, area, power, sensitive area, write speed, and read speed of the proposed SRAM are improved by -19.1%, 5.22%, 25.7%, -5.46%, 22.5%, 50.6%, 60.0%, 17.91%, and 0.74% compared to DNUSRM SRAM. Hence, the better balance among the parameters makes the proposed cell more suitable for space and critical terrestrial applications. Finally, the post-layout and Monte Carlo simulation validate the efficiency of SRAMs.