Contribution to the percolation threshold study of Silicon carbide filled polydimethylsiloxane composites used for field grading application

IF 2.3 3区 材料科学 Q3 MATERIALS SCIENCE, COMPOSITES
Renaud Metz, Sofiane Terzi, Barbara Fayard, Jean-Louis Bantignies, Mehrdad Hassanzadeh
{"title":"Contribution to the percolation threshold study of Silicon carbide filled polydimethylsiloxane composites used for field grading application","authors":"Renaud Metz, Sofiane Terzi, Barbara Fayard, Jean-Louis Bantignies, Mehrdad Hassanzadeh","doi":"10.1177/00219983241246615","DOIUrl":null,"url":null,"abstract":"The correlations between the electrical behavior and microstructural properties of samples consisting of particle composites fabricated from SiC particles embedded in a silicone matrix, were investigated using X-ray computed tomography. In the voltage field range 200-1000 V/mm, the measured conductivity as a function of SiC volume fraction exhibits two distinct gaps. Upon further investigations, we attribute these observations to percolation thresholds at the microscale. The first gap, corresponding to interconnections between SiC particles that were originally disconnected, is more significant at higher voltage; while the second one, resulting from shortening conductivity pathways between the external surfaces of the samples with the increase of SiC volume fraction, seems more sensitive to lower voltages and is correlated with a decrease of the tortuosity of the percolated SiC network.","PeriodicalId":15489,"journal":{"name":"Journal of Composite Materials","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Composite Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1177/00219983241246615","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COMPOSITES","Score":null,"Total":0}
引用次数: 0

Abstract

The correlations between the electrical behavior and microstructural properties of samples consisting of particle composites fabricated from SiC particles embedded in a silicone matrix, were investigated using X-ray computed tomography. In the voltage field range 200-1000 V/mm, the measured conductivity as a function of SiC volume fraction exhibits two distinct gaps. Upon further investigations, we attribute these observations to percolation thresholds at the microscale. The first gap, corresponding to interconnections between SiC particles that were originally disconnected, is more significant at higher voltage; while the second one, resulting from shortening conductivity pathways between the external surfaces of the samples with the increase of SiC volume fraction, seems more sensitive to lower voltages and is correlated with a decrease of the tortuosity of the percolated SiC network.
碳化硅填充聚二甲基硅氧烷复合材料田间分级应用的渗流阈值研究贡献
利用 X 射线计算机断层扫描技术研究了由嵌入硅酮基质中的碳化硅颗粒制成的颗粒复合材料样品的电气行为与微观结构特性之间的相关性。在 200-1000 V/mm 的电压场范围内,测得的电导率与碳化硅体积分数的函数关系呈现出两种截然不同的差距。经过进一步研究,我们将这些观察结果归因于微尺度的渗流阈值。第一个间隙与原本断开的 SiC 颗粒之间的相互连接相对应,在电压较高时更为显著;而第二个间隙则是由于随着 SiC 体积分数的增加,样品外表面之间的导电路径缩短而产生的,似乎对较低的电压更为敏感,并与渗滤 SiC 网络的曲折性降低相关。
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来源期刊
Journal of Composite Materials
Journal of Composite Materials 工程技术-材料科学:复合
CiteScore
5.40
自引率
6.90%
发文量
274
审稿时长
6.8 months
期刊介绍: Consistently ranked in the top 10 of the Thomson Scientific JCR, the Journal of Composite Materials publishes peer reviewed, original research papers from internationally renowned composite materials specialists from industry, universities and research organizations, featuring new advances in materials, processing, design, analysis, testing, performance and applications. This journal is a member of the Committee on Publication Ethics (COPE).
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