A first-principles study of bilayer 1T''-WTe2/CrI3: a candidate topological spin filter

Daniel Staros, Brenda Rubenstein, Panchapakesan Ganesh
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Abstract

The ability to manipulate electronic spin channels in 2D materials is crucial for realizing next-generation spintronics. Spin filters are spintronic components that polarize spins using external electromagnetic fields or intrinsic material properties like magnetism. Recently, topological protection from backscattering has emerged as an enticing feature that can be leveraged to enhance the robustness of 2D spin filters. In this work, we propose and then characterize one of the first 2D topological spin filters: bilayer CrI3/1T’-WTe2. To do so, we use a combination of density functional theory, maximally localized Wannier functions, and quantum transport calculations to demonstrate that a terraced bilayer satisfies the principal criteria for being a topological spin filter: namely, that it is gapless, exhibits spin-polarized charge transfer from WTe2 to CrI3 that renders the bilayer metallic, and has a topological boundary which retains the edge conductance of monolayer 1T’-WTe2. In particular, we observe that small negative ferromagnetic moments are induced on the W atoms in the bilayer, and the atomic magnetic moments on the Cr are approximately 3.2 μB/Cr compared to 2.9 μB/Cr in freestanding monolayer CrI3. Subtracting the charge and spin densities of the constituent monolayers from those of the bilayer further reveals spin-orbit coupling-enhanced spin-polarized charge transfer from WTe2 to CrI3. We demonstrate that the bilayer is topologically trivial by showing that its Chern number is zero. Lastly, we show that interfacial scattering at the boundary between the terraced materials does not remove WTe2’s edge conductance. Altogether, this evidence indicates that BL 1T’-WTe2/CrI3 is gapless, magnetic, and topologically trivial, meaning that a terraced WTe2/CrI3 bilayer heterostructure in which only a portion of a WTe2 monolayer is topped with CrI3 is a promising candidate for a 2D topological spin filter. Our results further suggest that 1D chiral edge states may be realized by stacking strongly ferromagnetic monolayers, like CrI3, atop 2D nonmagnetic Weyl semimetals like 1T’-WTe2.

Abstract Image

双层 1T''-WTe2/CrI3 的第一性原理研究:一种候选拓扑自旋滤波器
在二维材料中操纵电子自旋通道的能力对于实现下一代自旋电子学至关重要。自旋滤波器是利用外部电磁场或材料固有特性(如磁性)极化自旋的自旋电子元件。最近,防止反向散射的拓扑保护已成为一种诱人的特性,可用于增强二维自旋滤波器的稳健性。在这项工作中,我们提出了首批二维拓扑自旋滤波器之一:双层 CrI3/1T'-WTe2,并对其进行了表征。为此,我们结合使用了密度泛函理论、最大局域万尼尔函数和量子输运计算,证明了阶梯状双电层符合拓扑自旋滤波器的主要标准:即它是无间隙的,表现出从 WTe2 到 CrI3 的自旋极化电荷转移,使双电层具有金属性,并且具有拓扑边界,保留了单层 1T'-WTe2 的边缘电导。特别是,我们观察到双电层中的 W 原子上产生了很小的负铁磁矩,Cr 原子上的磁矩约为 3.2 μB/Cr,而独立单层 CrI3 的磁矩为 2.9 μB/Cr。将组成单层的电荷密度和自旋密度从双电层的电荷密度和自旋密度中减去,可以进一步发现自旋轨道耦合增强了从 WTe2 到 CrI3 的自旋偏振电荷转移。我们通过证明双电层的切尔诺数为零,证明双电层在拓扑上是琐碎的。最后,我们还证明了梯层材料边界的界面散射不会消除 WTe2 的边缘电导。总之,这些证据表明,BL 1T'-WTe2/CrI3 是无间隙、有磁性和拓扑琐碎的,这意味着阶梯状 WTe2/CrI3 双层异质结构(其中只有部分 WTe2 单层顶部有 CrI3)是二维拓扑自旋滤波器的理想候选材料。我们的研究结果进一步表明,通过在 1T'-WTe2 等二维非磁性韦尔半金属上堆叠 CrI3 等强铁磁单层,可以实现一维手性边缘态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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