Compute-in-Memory with SAR ADC and 2T1C DRAM for MAC Operations

Tae Eun Jang, Kyu Hyun Lee, Gi Yeol Kim, Su Yeon Yun, Da-Hyeon Youn, Hyunggu Choi, Jihyang Kim, Soo Youn Kim, Minkyu Song
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Abstract

This paper presents a compute-in-memory (CIM) architecture for MAC operation using 2T1 C dynamic random access memory (DRAM) and a successive-approximation analog-to-digital converter (SAR ADC). The proposed design features CIM analog multiplication and summation architecture consisting of a digital-to-time converter (DTC) and SAR ADC. The DTC converts the input code into clock-based pulse width, and the calculation can be done by passing through pulse into a 2T1C DRAM array in parallel. The proposed structure is implemented using a 28-nm CMOS process, operates four parallel $2-bit\times 4-bit$ multiplication and total summation simultaneously, and a single calculation requires 140ns for 100MHz system clock frequency.
利用 SAR ADC 和 2T1C DRAM 进行 MAC 运算的内存计算
本文介绍了一种用于 MAC 运算的内存计算(CIM)架构,该架构使用 2T1 C 动态随机存取存储器(DRAM)和逐次逼近模数转换器(SAR ADC)。所提出的设计采用 CIM 模拟乘法和求和架构,包括数字到时间转换器(DTC)和 SAR ADC。DTC 将输入代码转换为基于时钟的脉宽,通过将脉冲并行传入 2T1C DRAM 阵列来完成计算。所提出的结构采用 28 纳米 CMOS 工艺实现,可同时进行四个并行的 2 位/次 4 位元乘法和总和运算,在 100MHz 系统时钟频率下,单次运算需要 140ns 的时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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