Internal Compensation X-Ray Detector Pixel Circuit with IGZO TFT and Perovskite Single Crystal

Janghoo Lee, Youngjin Kim, Hyekang Park, Seoyun Kim, Seyong Choi, S. Moon, Wei Lei, Byoung Seong Bae
{"title":"Internal Compensation X-Ray Detector Pixel Circuit with IGZO TFT and Perovskite Single Crystal","authors":"Janghoo Lee, Youngjin Kim, Hyekang Park, Seoyun Kim, Seyong Choi, S. Moon, Wei Lei, Byoung Seong Bae","doi":"10.1109/ICEIC61013.2024.10457199","DOIUrl":null,"url":null,"abstract":"The flat panel detector (FPD) detecting X-ray has several applications like medical imaging, security checks, and industrial inspection. Nowadays, an active pixel sensor (APS) is applied for X-ray detectors composed of three transistors normally. One is for reset of the circuit and the other two are for amplification and readout. This fundamental structure offers advantages in terms of high resolution, rapid detection speed, and heightened sensitivity. However, the output signal is reliant on electrical parameters, particularly the threshold voltage and mobility of the amplifying transistor, which can vary for various reasons. To mitigate this variability, compensation methods, both internal and external, have been explored. In this research, we introduce an innovative internal compensation pixel circuit tailored for X-ray detectors and validate its performance through simulations based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The simulation results indicate that our proposed pixel circuit demonstrates remarkable resilience, with only a -0.16% and 0.04% error rate when threshold voltage variation falls within the range of ±0.5 V, in contrast to the 10% variation observed in conventional pixel circuits.","PeriodicalId":518726,"journal":{"name":"2024 International Conference on Electronics, Information, and Communication (ICEIC)","volume":"126 9","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2024-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2024 International Conference on Electronics, Information, and Communication (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEIC61013.2024.10457199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The flat panel detector (FPD) detecting X-ray has several applications like medical imaging, security checks, and industrial inspection. Nowadays, an active pixel sensor (APS) is applied for X-ray detectors composed of three transistors normally. One is for reset of the circuit and the other two are for amplification and readout. This fundamental structure offers advantages in terms of high resolution, rapid detection speed, and heightened sensitivity. However, the output signal is reliant on electrical parameters, particularly the threshold voltage and mobility of the amplifying transistor, which can vary for various reasons. To mitigate this variability, compensation methods, both internal and external, have been explored. In this research, we introduce an innovative internal compensation pixel circuit tailored for X-ray detectors and validate its performance through simulations based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The simulation results indicate that our proposed pixel circuit demonstrates remarkable resilience, with only a -0.16% and 0.04% error rate when threshold voltage variation falls within the range of ±0.5 V, in contrast to the 10% variation observed in conventional pixel circuits.
采用 IGZO TFT 和 Perovskite 单晶的内部补偿 X 射线探测器像素电路
探测 X 射线的平板探测器(FPD)有多种应用,如医疗成像、安全检查和工业检测。如今,有源像素传感器(APS)被应用于 X 射线探测器,通常由三个晶体管组成。其中一个用于电路复位,另外两个用于放大和读出。这种基本结构具有分辨率高、检测速度快和灵敏度高等优点。然而,输出信号依赖于电气参数,特别是放大晶体管的阈值电压和迁移率,这些参数会因各种原因而变化。为了减少这种变化,人们探索了内部和外部补偿方法。在这项研究中,我们介绍了一种为 X 射线探测器量身定制的创新型内部补偿像素电路,并通过基于非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFT)的仿真验证了其性能。仿真结果表明,我们提出的像素电路具有出色的恢复能力,当阈值电压变化在 ±0.5 V 范围内时,误差率仅为 -0.16% 和 0.04%,而传统像素电路的误差率为 10%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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