New Class of Discrete-Time Memristor Circuits: First Integrals, Coexisting Attractors and Bifurcations Without Parameters

M. D. Marco, M. Forti, L. Pancioni, Alberto Tesi
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Abstract

The use of ideal memristors in a continuous-time (CT) nonlinear circuit is known to greatly enrich the dynamic behavior with respect to the memristorless counterpart, which is a crucial property for applications in future analog electronic circuits. This can be explained via the flux–charge analysis method (FCAM), according to which CT circuits with ideal memristors have for structural reasons first integrals (or invariants of motion, or conserved quantities) and their state space can be foliated in infinitely many invariant manifolds where they can display different dynamics. The paper introduces a new discretization scheme for the memristor which, differently from those adopted in the literature, guarantees that the first integrals of the CT memristor circuits are preserved exactly in the discretization, and that this is true for any step size. This new scheme makes it possible to extend FCAM to discrete-time (DT) memristor circuits and rigorously show the existence of invariant manifolds and infinitely many coexisting attractors (extreme multistability). Moreover, the paper addresses standard bifurcations varying the discretization step size and also bifurcations without parameters, i.e. bifurcations due to varying the initial conditions for fixed step size and circuit parameters. The method is illustrated by analyzing the dynamics and flip bifurcations with and without parameters in a DT memristor–capacitor circuit and the Poincaré–Andronov–Hopf bifurcation in a DT Murali–Lakshmanan–Chua circuit with a memristor. Simulations are also provided to illustrate bifurcations in a higher-order DT memristor Chua’s circuit. The results in the paper show that DT memristor circuits obtained with the proposed discretization scheme are able to display even richer dynamics and bifurcations than their CT counterparts, due to the coexistence of infinitely many attractors and the possibility to use the discretization step as a parameter without destroying the foliation in invariant manifolds.
新型离散时间 Memristor 电路:初积分、共存吸引子和无参数分岔
众所周知,在连续时间(CT)非线性电路中使用理想忆阻器可以极大地丰富无忆阻器电路的动态行为,这对于未来模拟电子电路的应用是至关重要的。这可以通过通量-电荷分析方法(FCAM)来解释,根据该方法,带有理想忆阻器的 CT 电路由于结构原因具有第一积分(或运动不变量,或守恒量),其状态空间可以在无限多的不变量流形中对折,在这些流形中可以显示不同的动态。本文介绍了一种新的忆阻器离散化方案,与文献中采用的方案不同,该方案保证 CT 忆阻器电路的初积分在离散化过程中得到精确保留,而且对于任何步长都是如此。这种新方案使 FCAM 扩展到离散时间(DT)忆阻器电路成为可能,并严格证明了不变流形和无限多共存吸引子(极端多稳定性)的存在。此外,论文还讨论了改变离散化步长的标准分岔,以及无参数分岔,即在步长和电路参数固定的情况下改变初始条件所导致的分岔。该方法通过分析带或不带参数的 DT Memristor 电容电路的动力学和翻转分岔,以及带 Memristor 的 DT Murali-Lakshmanan-Chua 电路的 Poincaré-Andronov-Hopf 分岔加以说明。论文还提供了模拟,以说明高阶 DT Memristor Chua 电路中的分岔。论文中的结果表明,由于存在无限多的吸引子,以及可以将离散化步骤作为参数而不破坏不变流形中的折叠,采用所提出的离散化方案得到的 DT Memristor 电路能够显示比 CT 电路更丰富的动力学和分岔。
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