Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells

IF 0.9 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Ovonic Research Pub Date : 2024-01-01 DOI:10.15251/jor.2024.201.75

A. B. Azzououm, A. Aissat, J. Vilcot

引用次数: 0

Abstract

This paper focuses on studying and simulating a GaAs1-xPx/Si1-yGey/Ge triple-junction solar cell structure. First, the strain and the bandgap energy associated to the SiGe layer have been studied. The optimal germanium concentration is 0.88 with a strain around 0.45%. Then, the phosphor concentration effect on the strain and the bandgap energy of the upper layer GaAs1-xPx/Si0.12Ge0.88 has been optimized. At room temperature, the optimal output parameter reach Jsc=34.41mA/cm2 , Voc=1.27V, FF=88.42% and η=38.45% for an absorber thickness of 4.5µm and x=0.47, with a strain that doesn’t exceed 1.5%. This study has enabled us to design a high-efficiency, low cost 3J solar cell.

查看原文本刊更多论文

GaAs1-xPx/Si1-yGey/Ge 三结太阳能电池的模拟与优化

本文重点研究和模拟 GaAs1-xPx/Si1-yGey/Ge 三结太阳能电池结构。首先，研究了与硅锗层相关的应变和带隙能。最佳锗浓度为 0.88，应变约为 0.45%。然后，对荧光粉浓度对上层 GaAs1-xPx/Si0.12Ge0.88 的应变和带隙能的影响进行了优化。在室温条件下，吸收体厚度为 4.5 微米、x=0.47、应变不超过 1.5%时，最佳输出参数为 Jsc=34.41mA/cm2、Voc=1.27V、FF=88.42% 和 η=38.45%。通过这项研究，我们设计出了一种高效率、低成本的 3J 太阳能电池。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Ovonic Research MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.90

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.