Investigation of the Effects of Different H2SO4, HCI, HNO3 and HCIO4 Liquid Acid Media on the Synthesis of CdTe Semiconductor Thin Films for Solar Cells

Ayça KIYAK YILDIRIM, Veli Şimşek
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Abstract

The main target of the present paper is to investigate the effect of different acidic aqueous media(DAAM) on the synthesis of cadmium telluride thin films(CdTeTFm). The synthesis of CdTeTFm was carried out by the electrochemical deposition method(EDM) in DAAM. The chronoamperometry method of electrodeposition(ED) was used for the production of CdTeTFm. Furthermore, the electrochemical behaviors of the solutions were studied using cyclic voltammetry. The experiments were carried out with 3 electrodes (a working electrode (WE), a reference electrode(CE), and a counter electrode(RE)) using the electrochemical cell potentiostatic method. The experimental conditions of the acidic aqueous CdTe solution have been determined to be pH 3.56-3.57, the temperature of the solution is 85°C, the concentration of CdTe 2.45x10-1 M, and the reaction time is 25 minutes. The physical properties of CdTeTFm were determined by XRD, SEM/EDX, FT-IR, and UV-VIS analysis methods. According to the results of the analysis, it was observed that acidic aqueous media have an important role in the synthesis of CdTeTFm. The bandgap ranges and Cd/Te ratios of the synthesized thin films were obtained as 1.42, 1.48, 1.50, 1.58 eV, 0.65, 0.587, 0.79 and 0.738, respectively.
不同 H2SO4、HCI、HNO3 和 HCIO4 液体酸介质对太阳能电池用碲化镉半导体薄膜合成的影响研究
本文的主要目的是研究不同酸性水介质(DAAM)对碲化镉薄膜(CdTeTFm)合成的影响。在 DAAM 中采用电化学沉积法(EDM)合成了碲化镉薄膜。碲化镉薄膜的制备采用了电沉积计时法(ED)。此外,还使用循环伏安法研究了溶液的电化学行为。实验使用 3 个电极(工作电极 (WE)、参比电极 (CE) 和对电极 (RE)),采用电化学电池恒电位法进行。实验条件确定碲化镉酸性水溶液的 pH 值为 3.56-3.57,溶液温度为 85°C,碲化镉浓度为 2.45x10-1 M,反应时间为 25 分钟。通过 XRD、SEM/EDX、FT-IR 和 UV-VIS 分析方法测定了 CdTeTFm 的物理性质。分析结果表明,酸性水介质对 CdTeTFm 的合成有重要作用。合成薄膜的带隙范围和 Cd/Te 比率分别为 1.42、1.48、1.50、1.58 eV、0.65、0.587、0.79 和 0.738。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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