Analysis of the structure of electrically conductive composite ceramics

M. Maistat, Andrii Kryvobok
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Abstract

The object of the research is electrically conductive ceramics. It aims to analyze the microstructure of electrically conductive ceramic composites based on silicon carbide and investigate the influence of silicon carbide content on their properties. This study is pivotal for enhancing materials used in high-tech applications, particularly in fields where distinct electrical insulation and mechanical characteristics are crucial. The microstructure analysis conducted through scanning electron microscopy confirmed the presence of silicon carbide in all examined ceramic samples, except in those where silicon carbide was not added. Special attention should be given to the sample with 30 % silicon carbide, distinguished by the lowest open porosity. These findings are corroborated by previous research where this sample exhibited superior properties: open porosity – 12.51 %, water absorption – 5.88 %, apparent density – 2.13 g/cm³, specific resistance – 0.43·106 Ω·m. These characteristics indicate low porosity and high structural-physical property values. The results not only affirm the successful incorporation of silicon carbide into the ceramic matrix but also highlight the prospects for applying the researched ceramic materials in areas where electrical insulation and mechanical properties are crucial. Specifically, the sample with 30 % silicon carbide appears particularly promising due to its high characteristics and lower porosity, making it potentially interesting for applications in high-tech industries such as electronics and telecommunications. The conclusions suggest the potential use of these ceramic materials in various high-tech industries where both electrical and mechanical properties are essential. The sample with 30 % silicon carbide, with its exceptional characteristics, holds potential for applications in advanced technologies. Further research in this direction could lead to the development of new materials for effective radiofrequency absorption, finding broad applications in different technological fields.
导电复合陶瓷的结构分析
研究对象是导电陶瓷。其目的是分析基于碳化硅的导电陶瓷复合材料的微观结构,并研究碳化硅含量对其性能的影响。这项研究对于提高高科技应用中的材料性能至关重要,尤其是在对电绝缘和机械特性要求极高的领域。通过扫描电子显微镜进行的微观结构分析证实,除未添加碳化硅的陶瓷样品外,所有受检陶瓷样品中都存在碳化硅。需要特别注意的是,碳化硅含量为 30% 的样品,其气孔率最低。以前的研究也证实了这些发现,这种样品表现出卓越的特性:开放孔隙率 - 12.51 %,吸水率 - 5.88 %,表观密度 - 2.13 g/cm³,比电阻 - 0.43-106 Ω-m。这些特性表明孔隙率低,结构物理性能值高。这些结果不仅证实了在陶瓷基体中成功地加入了碳化硅,而且还凸显了将所研究的陶瓷材料应用于电绝缘和机械性能至关重要的领域的前景。具体而言,含 30% 碳化硅的样品因其较高的特性和较低的孔隙率而显得特别有前景,因此有可能应用于电子和电信等高科技行业。结论表明,这些陶瓷材料有可能应用于对电气和机械性能都很重要的各种高科技行业。含 30% 碳化硅的样品具有优异的特性,有望应用于先进技术领域。在这一方向上的进一步研究可能会开发出有效吸收射频的新材料,从而在不同的技术领域找到广泛的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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