Study on Ductile-To-Brittle Transition Behavior in Fixed Diamond Abrasive Wire Sawing Process of Monocrystalline Silicon Ingot

Quoc-Phong Pham, Le Ngoc Quynh Hoa, Muhamad Amirul Haq, Le Nam Quoc Huy
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Abstract

- Monocrystalline silicon has become one of the most popular semiconductor materials for diverse industrial applications on account of its exceptional physical. As one of the initial steps of the monocrystalline silicon wafer manufacturing process, fixed diamond abrasive wire sawing is widely used in the slicing process because it provides faster, cleaner, increased size of the ingot as well as decreased the sawn kerf loss when compared with slurry wire sawing process. However, challenges arise from monocrystalline silicon's intrinsic hardness and brittleness, often resulting in subsurface cracks and micro-cracks on the surfaces of as-sawn wafers. To overcome these obstacles, this study employed a ductile regime machining technique applied to the fixed diamond abrasive wire sawing process. Moreover, this study calibrated accurately specific cutting energy consumption to remove material in ductile mode at the ductile to brittle transition point, which is used as a reference value for optimizing experimental parameters during the verification process. The findings of this study not only enhance our understanding of the mechanism behind the removal of brittle materials in a ductile manner but also serve as an experimental benchmark for achieving crack-free and subsurface damage-free monocrystalline silicon wafers through fixed diamond abrasive wire sawing processes.
固定金刚石磨料线切割单晶硅锭过程中的韧性到脆性转变行为研究
- 单晶硅因其优异的物理特性,已成为各种工业应用中最受欢迎的半导体材料之一。作为单晶硅片制造工艺的初始步骤之一,固定金刚石磨料线锯被广泛应用于切片工艺中,因为与浆料线锯工艺相比,固定金刚石磨料线锯能提供更快、更清洁、更大尺寸的硅锭,并能减少锯路损失。然而,单晶硅固有的硬度和脆性带来了挑战,经常导致锯切硅片表面出现次表层裂纹和微裂纹。为了克服这些障碍,本研究在固定金刚石磨料线锯工艺中采用了韧性机制加工技术。此外,本研究还精确校准了在韧性向脆性过渡点以韧性模式去除材料的特定切割能耗,并将其作为验证过程中优化实验参数的参考值。这项研究的结果不仅加深了我们对以韧性方式去除脆性材料背后机理的理解,还为通过固定金刚石磨料线锯工艺实现无裂纹和无表面下损伤的单晶硅片提供了实验基准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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