First-Principles Study on Evolution of Magnetic Domain in Two-Dimensional BaTiO3 Ultrathin Film Doped with Co under Electric Field

Nanomaterials Pub Date : 2024-03-27 DOI:10.3390/nano14070586
Haigen Gao, Yu Tang, Qilong Liao, Xiangyu Zhao, Bing Wang
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Abstract

The magnetization mechanism of Co-doped BaTiO3 ultrathin films is a subject of debate, which results in difficulties with the design of new multiferroics based on BaTiO3 matrixes. With the aid of a first-principles approach, it was observed that when the interstitial site and Ti vacancy were filled with Co, the configuration behaved in a nonmagnetic manner, indicating the significance of the Co content. Moreover, in the case of Co substituting two neighboring Ti atoms, when a direct current field was applied in the [100] direction, the magnetic domains excluding those in the [100], [010], and [001] directions were directed away. Further, the magnetoelectric constant was evaluated at ~449.3 mV/cmOe, showing strong magnetoelectric coupling at room temperature. Clearly, our study indicates that strict control of Ba, Ti, O, and Co stoichiometry can induce an electric and magnetic field conversion in two-dimensional BaTiO3 and may provide a new candidate for single-phase multiferroics for application in next-generation multifunctional devices.
电场作用下掺钴二维 BaTiO3 超薄薄膜磁畴演化的第一性原理研究
掺 Co 的 BaTiO3 超薄薄膜的磁化机制是一个争论不休的话题,这给基于 BaTiO3 基体的新型多铁氧体的设计带来了困难。借助第一原理方法,研究人员观察到,当 Co 填满间隙位点和 Ti 空位时,构型表现为非磁性,这表明了 Co 含量的重要性。此外,在 Co 取代两个相邻 Ti 原子的情况下,当在[100]方向施加直流电场时,除[100]、[010]和[001]方向的磁畴之外的磁畴都会被引开。此外,磁电常数被评估为 ~449.3 mV/cmOe,显示了室温下的强磁电耦合。显然,我们的研究表明,严格控制 Ba、Ti、O 和 Co 的化学计量可以在二维 BaTiO3 中诱导电场和磁场转换,并可能为应用于下一代多功能器件的单相多铁氧体提供新的候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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