EW METAL/SUPERCONDUCTOR-INSULATOR TRANSITIONS AND THEIR EFFECTS ON HIGH-TCSUPERCONDUCTIVITY INUNDERDOPED AND OPTIMALLY DOPED CUPRATES

Q3 Engineering
U. Kurbanov
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Abstract

Abstract.Anew approach to the metal/superconductor-insulator transition in doped cuprates by studying the polaron formation and localization of doped charge carriers (holes) in them and the possibility of transforming a metallic or superconducting system into an insulatorwas developed. Amore suitable criterion for such a phase transition by comparing the bandwidth (or Fermi energy) of large polarons with their binding energies in the cuprateswas derived. The possibility of the metal/superconductor-insulator transition and phase separation in doped cuprates resulting in the formation of competing metallic/superconducting and insulating phases in underdoped, optimally doped and even in overdoped high-Tccuprateswas predicted. Then the possible detrimental and beneficial effects of the different disorders (e.g. polaron formation and charge-density-wave transition) and the coexisting insulating and superconducting phases on the critical temperature 𝑇𝑐of the superconducting transition of underdoped and optimally doped cuprateswas examined. The actual superconducting transition temperature 𝑇𝑐in these materials using the theory of Bose-liquid superconductivity, and not theBardeen-Cooper-Schrieffer-like theory of Fermi-liquid superconductivity, which is incapable of predicting the relevant value of 𝑇𝑐in high-𝑇𝑐cuprateswas determined. We find thatthe suppressing of the polaronic and charge-density-waveeffects in optimally doped cuprates results in the enhancement of 𝑇𝑐, while some lattice defects (e.g., anion vacancies) in the cuprates may strongly affect, on 𝑇𝑐and enhance high-𝑇𝑐superconductivity in them.
新的金属/超导体-绝缘体跃迁及其对低掺杂和最佳掺杂铜氧化物高超导性的影响
摘要:通过研究掺杂铜氧化物中极子的形成和掺杂电荷载流子(空穴)的定位以及将金属或超导系统转变为绝缘体的可能性,提出了掺杂铜氧化物中金属/超导-绝缘体转变的新方法。通过比较大极子的带宽(或费米能)和它们在铜氧化物中的结合能,得出了更适合这种相变的标准。预测了掺杂铜氧化物中金属/超导体-绝缘体转变和相分离的可能性,这导致在掺杂不足、最佳掺杂甚至过量掺杂的高掺杂铜氧化物中形成相互竞争的金属/超导和绝缘相。然后,研究了不同失调(如极子形成和电荷密度波转变)以及绝缘相和超导相共存对掺杂不足和最佳掺杂铜氧化物超导转变临界温度𝑇𝑐可能产生的不利和有利影响。我们利用玻色-液体超导理论,而非类似于巴丁-库珀-施里弗的费米-液体超导理论,确定了这些材料中的实际超导转变温度𝑇𝑐,后者无法预测高𝑇𝑐铜酸盐中的𝑇𝑐相关值。我们发现,最佳掺杂铜氧化物中极子效应和电荷密度波效应的抑制会导致𝑇𝑐的增强,而铜氧化物中的一些晶格缺陷(如阴离子空位)可能会强烈影响𝑇𝑐并增强其高𝑇𝑐超导性。
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CiteScore
1.10
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