Optical and Optoelectrical Properties of Ternary Chalcogenide CuInS2/TiO2 Nanocomposite Prepared by Mechanochemical Synthesis

Crystals Pub Date : 2024-03-30 DOI:10.3390/cryst14040324
E. Dutková, M. Baláž, Jaroslav Kováč, N. Daneu, A. Kashimbetova, Jaroslav Briančin, Jaroslav Kováč, S. Kováčová, L. Čelko
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Abstract

In this work, a nanocomposite consisting of ternary chalcogenide CuInS2 and TiO2 was prepared and its optical and optoelectrical properties were investigated. The CuInS2/TiO2 nanocomposite was produced via one-step mechanochemical synthesis and characterized from the crystal structure, microstructural, morphology, surface, optical, and optoelectrical properties viewpoints. X-ray diffraction confirmed the presence of both components, CuInS2 and TiO2, in the nanocomposite and revealed a partial transformation of anatase to rutile. The presence of both components in the samples was also proven by Raman spectroscopy. HRTEM confirmed the nanocrystalline character of the samples as crystallites ranging from around 10 nm and up to a few tens of nanometers were found. The presence of the agglomerated nanoparticles into larger grains was proven by SEM. The measured optical properties of CuInS2, TiO2, and CuInS2/TiO2 nanocomposites demonstrate optical bandgaps of ~1.62 eV for CuInS2 and 3.26 eV for TiO2. The measurement of the optoelectrical properties showed that the presence of TiO2 in the CuInS2/TiO2 nanocomposite increased its conductivity and modified the photosensitivity depending on the ratio of the components. This study has demonstrated the possibility of preparing a CuInS2/TiO2 nanocomposite material with promising applications in optoelectronics in the visible region in an eco-friendly manner.
用机械化学合成法制备的三元钙钛矿 CuInS2/TiO2 纳米复合材料的光学和光电特性
本研究制备了一种由三元铬化物 CuInS2 和 TiO2 组成的纳米复合材料,并对其光学和光电特性进行了研究。CuInS2/TiO2 纳米复合材料通过一步机械化学合成制得,并从晶体结构、微观结构、形貌、表面、光学和光电特性等方面对其进行了表征。X 射线衍射证实了纳米复合材料中同时存在 CuInS2 和 TiO2 两种成分,并揭示了锐钛矿向金红石型的部分转变。拉曼光谱也证实了样品中存在这两种成分。HRTEM 证实了样品的纳米结晶特性,发现了 10 纳米到几十纳米的结晶。扫描电子显微镜(SEM)证实了纳米颗粒团聚成较大晶粒的现象。测量的 CuInS2、TiO2 和 CuInS2/TiO2 纳米复合材料的光学特性表明,CuInS2 和 TiO2 的光带隙分别为 1.62 eV 和 3.26 eV。光电特性测量结果表明,CuInS2/TiO2 纳米复合材料中 TiO2 的存在增加了其导电性,并根据各组分的比例改变了光敏性。这项研究证明了制备 CuInS2/TiO2 纳米复合材料的可能性,这种材料在可见光区域的光电子学中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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