Solvent effects on the electrochemical performance of few layered MoS2 electrodes fabricated using FTO substrates

Abin Philip, A Ruban Kumar
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Abstract

Owing to its exceptional structural, electrical, and optical features, Molybdenum disulphide (MoS2), a two-dimensional (2D) layered material with tuneable bandgap, finds its application in electrochemical supercapacitors for superior energy and power density. Because of their low toxicity and long-term energy storage, the development of MoS2-based supercapacitors is inevitable. The study of solvent effects on the electrochemical performance of a few layered MoS2 using FTO substrates is done for the first time to the best of our knowledge. Exfoliating bulk MoS2 powder in different solvents with variable surface tensions such as Ethanol, Ethylene Glycol (EG), Dimethylformamide (DMF), and Dimethyl Sulfoxide (DMSO) results in the formation of few-layered MoS2 structures. The sample’s structural, optical, and electrochemical behaviours are investigated using x-ray diffraction (XRD), atomic force microscopy (AFM), UV spectroscopy, Fourier transform infrared (FTIR), cyclic-voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS). XRD confirms the formation of a 2D MoS2 film with (002) planes and the optical investigation revealed the variation of layer-dependent bandgap with solvents. We observe both faradaic and non-faradaic charge storage mechanisms in the samples and demonstrate a superior pseudocapacitive behaviour for MoS2 in DMF with a maximum specific capacitance of 34.25 F g−1 at a current density of 1 A/g.
溶剂对使用 FTO 基底制造的几层 MoS2 电极电化学性能的影响
二硫化钼(MoS2)是一种具有可调带隙的二维(2D)层状材料,由于其卓越的结构、电学和光学特性,可应用于电化学超级电容器,以获得更高的能量和功率密度。由于其低毒性和长期储能特性,开发基于 MoS2 的超级电容器势在必行。据我们所知,利用 FTO 基底研究溶剂对几层 MoS2 电化学性能的影响尚属首次。在乙醇、乙二醇 (EG)、二甲基甲酰胺 (DMF) 和二甲基亚砜 (DMSO) 等表面张力可变的不同溶剂中剥离块状 MoS2 粉末会形成少层 MoS2 结构。研究人员使用 X 射线衍射 (XRD)、原子力显微镜 (AFM)、紫外光谱、傅立叶变换红外光谱 (FTIR)、循环伏安法 (CV)、电静态充放电 (GCD) 和电化学阻抗光谱 (EIS) 对样品的结构、光学和电化学行为进行了研究。XRD 证实了具有 (002) 平面的二维 MoS2 薄膜的形成,而光学研究则揭示了随溶剂变化的层带隙。我们观察到了样品中的法拉第和非法拉第电荷存储机制,并证明了 DMF 中的 MoS2 具有卓越的伪电容特性,在电流密度为 1 A/g 时,最大比电容为 34.25 F g-1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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