{"title":"Optical design of reflective Bragg mirrors for EUV photolithography","authors":"Yu-Yen Tsai, Ting-Wei Chen","doi":"10.1088/2040-8986/ad2e20","DOIUrl":null,"url":null,"abstract":"In this article. we investigate the optical characteristics of reflective extreme-ultraviolet (EUV) mirrors for the application of lithography for 7 nm node and below. By using the conventional quarter-wavelength stacked Bragg reflective configuration of Si-based metal multilayers centered at soft x-ray 13.5 nm, the maximum reflection is numerically computed to be approximately 0.7 at nearly normal incidence, which is consistent to the typical values reported by Advanced Semiconductor Materials Lithography (ASML) for Mo/Si stacked multilayers. The full width half maximum (FWHM) bandwidth is <inline-formula>\n<tex-math><?CDATA $0.65\\sim0.78$?></tex-math>\n<mml:math overflow=\"scroll\"><mml:mn>0.65</mml:mn><mml:mo>∼</mml:mo><mml:mn>0.78</mml:mn></mml:math>\n<inline-graphic xlink:href=\"joptad2e20ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\n</inline-formula> nm. In our numerical simulation, moreover, we find Nb/Si reflective mirrors can be potentially utilized to replace Mo/Si stacked multilayers in order to harvest more EUV light inside the scanners.","PeriodicalId":16775,"journal":{"name":"Journal of Optics","volume":"44 1","pages":""},"PeriodicalIF":2.0000,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Optics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/2040-8986/ad2e20","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
In this article. we investigate the optical characteristics of reflective extreme-ultraviolet (EUV) mirrors for the application of lithography for 7 nm node and below. By using the conventional quarter-wavelength stacked Bragg reflective configuration of Si-based metal multilayers centered at soft x-ray 13.5 nm, the maximum reflection is numerically computed to be approximately 0.7 at nearly normal incidence, which is consistent to the typical values reported by Advanced Semiconductor Materials Lithography (ASML) for Mo/Si stacked multilayers. The full width half maximum (FWHM) bandwidth is 0.65∼0.78 nm. In our numerical simulation, moreover, we find Nb/Si reflective mirrors can be potentially utilized to replace Mo/Si stacked multilayers in order to harvest more EUV light inside the scanners.
期刊介绍:
Journal of Optics publishes new experimental and theoretical research across all areas of pure and applied optics, both modern and classical. Research areas are categorised as:
Nanophotonics and plasmonics
Metamaterials and structured photonic materials
Quantum photonics
Biophotonics
Light-matter interactions
Nonlinear and ultrafast optics
Propagation, diffraction and scattering
Optical communication
Integrated optics
Photovoltaics and energy harvesting
We discourage incremental advances, purely numerical simulations without any validation, or research without a strong optics advance, e.g. computer algorithms applied to optical and imaging processes, equipment designs or material fabrication.