Effect of annealing temperature on the physical of nanostructured TiO2 films prepared by sol-gel method

IF 1 4区 材料科学
A. A. Abdul Razaq, F. H. Jasim, S. S. Chiad, F. A. Jasim, Z. S. A. Mosa, Y. H. Kadhim
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引用次数: 0

Abstract

This study uses glass substrates to create nanostructured TiO2 thin films employing SolGel method. Afterwards, TiO2 films are annealed in air for two hours at (400, 450, and 500) °C. The XRD tests demonstrate that all films are tetragonal polycrystalline and have orientations equal to those described in the literature. These findings suggest that when the annealing temperature rises, grain size increases. As the annealing temperature is raised, the Full Width at Half Maximum (FWHM) reduces from 0.57° to 0.0.51°, and the dislocation density drops from 45.22 to 39.22.18 nm, respectively. AFM has examined the thin films' surface morphology. The films formed using this method have good crystalline and homogenous surfaces, according to AFM tests. With an increase in annealing temperature, thin films' average particle size, average roughness, and Root Mean Square (RMS) value all drop. The films' optical characteristics. The transmission was over 97% decreased with increasing annealing temperatures. It is found that the band gap decreases from 3.42 to 3.3 eV with increasing annealing temperature. Between 300 and 900 nm, the films' refractive indices range from 2.89 to 2.2.76. With higher annealing temperatures, the films' extinction coefficients fall.
退火温度对溶胶-凝胶法制备的纳米结构 TiO2 薄膜物理特性的影响
本研究采用 SolGel 方法在玻璃基底上制作纳米结构的二氧化钛薄膜。随后,TiO2 薄膜在(400、450 和 500)°C 下空气中退火两小时。XRD 测试表明,所有薄膜都是四方多晶体,取向与文献中描述的相同。这些结果表明,当退火温度升高时,晶粒尺寸增大。随着退火温度的升高,半最大值全宽(FWHM)从 0.57°减小到 0.0.51°,位错密度从 45.22 nm 下降到 39.22.18 nm。原子力显微镜检测了薄膜的表面形貌。根据原子力显微镜测试,用这种方法形成的薄膜具有良好的结晶性和均匀的表面。随着退火温度的升高,薄膜的平均粒径、平均粗糙度和均方根值都有所下降。薄膜的光学特性。随着退火温度的升高,透射率下降了 97%。研究发现,随着退火温度的升高,带隙从 3.42 eV 下降到 3.3 eV。在 300 纳米到 900 纳米之间,薄膜的折射率在 2.89 到 2.2.76 之间。退火温度越高,薄膜的消光系数越低。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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