Surface parametric influences on the photocatalytic behaviour of zinc oxide nanoparticles

IF 1 4区 材料科学
R. Jagadeeswari, G. Rathika, K. V. Satheesh Kumar, P. Selvakumar
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引用次数: 0

Abstract

Zinc oxide nanoparticles were chemically synthesised and characterised by UV-DRS spectroscopy, FTIR, scanning electron microscopy with energy-dispersive X-ray diffraction, and X-ray powder diffraction. In order to evaluate the impact of the synthesis process on the structural parameters, Rietveld refinement was done using the GSAS-II programme on experimentally acquired XRD data. ZnO was found to have a hexagonal structure with lattice parameters of a = b =3.247 Å; c = 5.205Å and an average size of about 20-40 nm, as determined by Rietveld refinement of XRD and SEM data. FTIR and EDX analysis was used to confirm the functional group and elemental composition of ZnO NPs. The UV-DRS spectra revealed that the synthesised ZnO had an optical band gap of 3.05 eV. Parametric investigations of the surface morphology of ZnO nanostructures were conducted using the Gwyddion programme. Pseudo-first-order rate kinetics were observed for the photodegradation of two cationic dyes, MB (87.87%) and RhB (74.79%), in the presence of UV light.
表面参数对纳米氧化锌光催化行为的影响
氧化锌纳米粒子是用化学方法合成的,并通过紫外-可见分光光度法、傅立叶变换红外光谱法、扫描电子显微镜与能量色散 X 射线衍射法和 X 射线粉末衍射法进行了表征。为了评估合成过程对结构参数的影响,使用 GSAS-II 程序对实验获得的 XRD 数据进行了里特维尔德细化。通过对 XRD 和 SEM 数据进行里特维尔德细化,发现氧化锌具有六边形结构,其晶格参数为 a = b =3.247 Å;c = 5.205 Å,平均尺寸约为 20-40 nm。傅立叶变换红外光谱(FTIR)和电离辐射分析(EDX)用于确认氧化锌纳米粒子的官能团和元素组成。UV-DRS 光谱显示,合成的氧化锌具有 3.05 eV 的光带隙。使用 Gwyddion 程序对氧化锌纳米结构的表面形态进行了参数研究。在紫外光的作用下,观察到了两种阳离子染料 MB(87.87%)和 RhB(74.79%)的光降解伪一阶速率动力学。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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