Corrosion-induced fracture of Cu-Al microelectronics interconnects

Kai-chieh Chiang, M. Koslowski
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Abstract

We present a mechano-chemical model that couples corrosion, mechanical response, and fracture. The model is used to understand the failure of Cu wires on Al pads in microelectronic packages using a multi-phase field approach. Under high humidity environments, the Cu-rich intermetallic compounds (IMC), Cu9Al4, formed at the interface between Cu and Al, undergo a corrosion degradation process. The IMC expands while undergoing corrosion, inducing stresses that nucleate and propagate cracks along the interface between the Cu-rich IMC and Cu. Furthermore, the volumetric expansion of the IMC may cause damage to the passivation layer and enhance the nucleation of new corrosion pits. We show that the presence of a crack accelerates the corrosion process. The model developed here can be extended to other systems and applications.
铜铝微电子互连器件的腐蚀诱导断裂
我们提出了一种将腐蚀、机械响应和断裂结合起来的机械化学模型。该模型采用多相场方法,用于理解微电子封装中铝垫上铜线的失效。在高湿度环境下,铜和铝界面上形成的富铜金属间化合物(IMC)Cu9Al4 会发生腐蚀降解过程。IMC 在腐蚀过程中会膨胀,从而产生应力,使富含 Cu 的 IMC 与 Cu 之间的界面产生裂纹并沿裂纹扩展。此外,IMC 的体积膨胀可能会对钝化层造成破坏,并促进新腐蚀坑的成核。我们的研究表明,裂纹的存在会加速腐蚀过程。此处开发的模型可扩展到其他系统和应用中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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