The photodiode performances of NDI-appended ruthenium complexes

Nano Express Pub Date : 2024-03-15 DOI:10.1088/2632-959x/ad34a4

Sibel Seven, Evin Yiğit, Sinan Bayındır, Feride Akman, Ö. Sevgili, Osman Dayan, I. Orak

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Abstract

The synthesis and investigation of photoelectric studies of simple organic compounds as organic interlayers are of significant importance and widely studied. As such, we synthesized naphthalene diimide (NDI)-appended ruthenium complexes (Ru-NDIs) to function as the interface layer, and have fabricated novel Al/NDIs or Ru-NDIs/p-Si devices (D1-D4) to investigate their photoelectric properties. Subsequently, we compared and discussed the photoelectric properties of these devices after synthesis and fabrication. According to this, the band-gap energy (Eg) values of organic materials were found to range from 2.95 eV to 3.14 eV, making them ideal for solar cells applications. Additionally, the photoresponse (Pr) values of Al/NDIs or Ru-NDIs/p-Si devices (D1-D4) were found to be 59.25, 1593.08, 198.77, and 134.47, respectively. Moreover, the Al/Ru-NDIs/p-Si D2 structure exhibited the highest Pr values. Experimental results indicate that since the four optoelectronic devices arranged with the derivation of synthesized compounds have good photoresponse characteristics, they can be utilized as a photosensor or photodiodes in different electronic and optoelectronic technologies.

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NDI 添加的钌络合物的光电二极管性能

合成和研究简单有机化合物作为有机中间层的光电研究具有重要意义，并得到了广泛研究。因此，我们合成了萘二亚胺（NDI）添加钌复合物（Ru-NDIs）作为界面层，并制作了新型 Al/NDIs 或 Ru-NDIs/p-Si 器件（D1-D4）来研究它们的光电特性。随后，我们比较并讨论了这些器件在合成和制造后的光电特性。结果发现，有机材料的带隙能 (Eg) 值在 2.95 eV 至 3.14 eV 之间，是太阳能电池应用的理想材料。此外，Al/NDI 或 Ru-NDIs/p-Si 器件（D1-D4）的光响应（Pr）值分别为 59.25、1593.08、198.77 和 134.47。此外，Al/Ru-NDIs/p-Si D2 结构的 Pr 值最高。实验结果表明，由于合成化合物衍生出的四种光电器件具有良好的光响应特性，因此可在不同的电子和光电技术中用作光传感器或光电二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nano Express

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