Computational design of single-atom catalysts embedded on reduced graphitic carbon nitride monolayers

M. Jakhar, Yi Ding, B. Fahlman, V. Barone
{"title":"Computational design of single-atom catalysts embedded on reduced graphitic carbon nitride monolayers","authors":"M. Jakhar, Yi Ding, B. Fahlman, V. Barone","doi":"10.1088/2632-959x/ad34a6","DOIUrl":null,"url":null,"abstract":"\n The design of efficient single-atom catalysts (SACs) with optimal activity and selectivity for sustainable energy and environmental applications remains a challenge. In this work, comprehensive first-principles calculations are performed to validate the feasibility of single TM atoms (3d, 4d, and 5d series) embedded in two different conformations of graphitic carbon nitride (g-C3N4) monolayers. Additionally, we investigate the effect of nitrogen vacancies in the g-C3N4 monolayers on the absorption of SACs considering three potential absorption scenarios that correspond to different experimental conditions. Our results point to the most stable configurations with the lowest formation energies and indicate that the absorption of single TM atoms on-vacancy and on-center sites are more favorable than via-substitution. In addition to the thermodynamic stability, electrochemical stability is also investigated through the calculation of the dissolution potential of the SACs. Within the scenarios considered in this study, we find that Pt, Pd, Rh, Au, Ru, Ir, Cu, Co, Fe, and Ni will produce the most robust SACs on both (edge and bridge) N vacancy site of reduced g-C3N4. Our findings provide guidance for the design and development of g-C3N4 sheets decorated with single TM atoms for technological applications such as pollutant degradation, CO2 reduction, N2 fixation, selective oxidation, water splitting, and metal ion-based batteries.","PeriodicalId":501827,"journal":{"name":"Nano Express","volume":"126 21","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2632-959x/ad34a6","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The design of efficient single-atom catalysts (SACs) with optimal activity and selectivity for sustainable energy and environmental applications remains a challenge. In this work, comprehensive first-principles calculations are performed to validate the feasibility of single TM atoms (3d, 4d, and 5d series) embedded in two different conformations of graphitic carbon nitride (g-C3N4) monolayers. Additionally, we investigate the effect of nitrogen vacancies in the g-C3N4 monolayers on the absorption of SACs considering three potential absorption scenarios that correspond to different experimental conditions. Our results point to the most stable configurations with the lowest formation energies and indicate that the absorption of single TM atoms on-vacancy and on-center sites are more favorable than via-substitution. In addition to the thermodynamic stability, electrochemical stability is also investigated through the calculation of the dissolution potential of the SACs. Within the scenarios considered in this study, we find that Pt, Pd, Rh, Au, Ru, Ir, Cu, Co, Fe, and Ni will produce the most robust SACs on both (edge and bridge) N vacancy site of reduced g-C3N4. Our findings provide guidance for the design and development of g-C3N4 sheets decorated with single TM atoms for technological applications such as pollutant degradation, CO2 reduction, N2 fixation, selective oxidation, water splitting, and metal ion-based batteries.
嵌入还原氮化石墨碳单层的单原子催化剂的计算设计
为可持续能源和环境应用设计具有最佳活性和选择性的高效单原子催化剂(SAC)仍然是一项挑战。在这项工作中,我们进行了全面的第一原理计算,以验证单 TM 原子(3d、4d 和 5d 系列)嵌入氮化石墨碳(g-C3N4)单层的两种不同构象的可行性。此外,我们还研究了 g-C3N4 单层中的氮空位对 SACs 吸收的影响,并考虑了与不同实验条件相对应的三种潜在吸收情况。我们的研究结果表明,最稳定的构型具有最低的形成能,并表明空位上和中心点上的单个 TM 原子的吸收比通孔置换更有利。除了热力学稳定性之外,我们还通过计算 SAC 的溶解电位研究了电化学稳定性。在本研究考虑的方案中,我们发现 Pt、Pd、Rh、Au、Ru、Ir、Cu、Co、Fe 和 Ni 将在还原 g-C3N4 的 N 空位(边缘和桥接)上产生最稳定的 SAC。我们的发现为设计和开发装饰有单个 TM 原子的 g-C3N4 薄片提供了指导,可用于污染物降解、二氧化碳还原、N2 固定、选择性氧化、水分离和金属离子电池等技术应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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