Study of the impurity composition of silicon tetrachloride by gas chromatography-mass-spectrometry

A. Y. Sozin, O. Y. Chernova, T. G. Sorochkina, O. Troshin, A. Kotkov
{"title":"Study of the impurity composition of silicon tetrachloride by gas chromatography-mass-spectrometry","authors":"A. Y. Sozin, O. Y. Chernova, T. G. Sorochkina, O. Troshin, A. Kotkov","doi":"10.26896/1028-6861-2024-90-3-5-11","DOIUrl":null,"url":null,"abstract":"Silicon tetrachloride is a sought-after substance in the semiconductor and optoelectronics industries. High demands placed on its purity entail the need for detail information about the impurities present. The impurity composition of silicon tetrachloride obtained by different technologies (chlorination of diatomite and charcoal, disproportionation of trichlorosilane and chlorination of isotopically enriched silicon) was studied using the method of chromatography-mass spectrometry. Study of the possibility of using a DB-5MS 30 m × 0.32 mm × 0.25 μm capillary column with methylsiloxane as a stationary liquid phase to separate impurities revealed that most of the identified substances are eluted in the form of separate chromatographic peaks, which simplifies their determination. The exceptions are impurities N2, O2, Ar, as well as CO2, SiF4, and CHClF2, HCl, H2S. They were registered using the characteristic peaks of the mass spectra. To identify impurities, experimental mass spectra were compared to data from the NIST library and those known from the literature. Information on the impurity composition of SiCl4 has been expanded. It contains permanent gases, aliphatic and chlorine-containing hydrocarbons, chlorides of elements, sulfur-containing substances, and organosilicon compounds. A total of 30 compounds are identified, 19 being discovered for the first time. The mass spectrum of C2H6Cl4OSi2, which is absent in the literature, was obtained and described. For the first time, data on the impurity composition of isotopically enriched silicon tetrachloride have been obtained. A comparative analysis of the impurity composition of the samples under study was carried out and the impurities characteristic of each of them were determined. The data obtained in the study can be used in developing the technology for deep purification of silicon tetrachloride and in characterization of SiCl4 by manufacturing enterprises.","PeriodicalId":504498,"journal":{"name":"Industrial laboratory. Diagnostics of materials","volume":" 34","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Industrial laboratory. Diagnostics of materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.26896/1028-6861-2024-90-3-5-11","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Silicon tetrachloride is a sought-after substance in the semiconductor and optoelectronics industries. High demands placed on its purity entail the need for detail information about the impurities present. The impurity composition of silicon tetrachloride obtained by different technologies (chlorination of diatomite and charcoal, disproportionation of trichlorosilane and chlorination of isotopically enriched silicon) was studied using the method of chromatography-mass spectrometry. Study of the possibility of using a DB-5MS 30 m × 0.32 mm × 0.25 μm capillary column with methylsiloxane as a stationary liquid phase to separate impurities revealed that most of the identified substances are eluted in the form of separate chromatographic peaks, which simplifies their determination. The exceptions are impurities N2, O2, Ar, as well as CO2, SiF4, and CHClF2, HCl, H2S. They were registered using the characteristic peaks of the mass spectra. To identify impurities, experimental mass spectra were compared to data from the NIST library and those known from the literature. Information on the impurity composition of SiCl4 has been expanded. It contains permanent gases, aliphatic and chlorine-containing hydrocarbons, chlorides of elements, sulfur-containing substances, and organosilicon compounds. A total of 30 compounds are identified, 19 being discovered for the first time. The mass spectrum of C2H6Cl4OSi2, which is absent in the literature, was obtained and described. For the first time, data on the impurity composition of isotopically enriched silicon tetrachloride have been obtained. A comparative analysis of the impurity composition of the samples under study was carried out and the impurities characteristic of each of them were determined. The data obtained in the study can be used in developing the technology for deep purification of silicon tetrachloride and in characterization of SiCl4 by manufacturing enterprises.
利用气相色谱-质谱法研究四氯化硅的杂质成分
四氯化硅是半导体和光电子行业的抢手货。由于对四氯化硅的纯度要求很高,因此需要详细了解其中存在的杂质。利用色谱-质谱法研究了通过不同技术(硅藻土和木炭氯化、三氯硅烷歧化和同位素富集硅氯化)获得的四氯化硅的杂质组成。对使用 DB-5MS 30 m × 0.32 mm × 0.25 μm 毛细管色谱柱(以甲基硅氧烷为固定液相)分离杂质的可能性进行了研究,结果表明,大多数已鉴定物质都是以单独色谱峰的形式洗脱出来的,这简化了对它们的测定。但 N2、O2、Ar 以及 CO2、SiF4 和 CHClF2、HCl、H2S 等杂质除外。我们利用质谱的特征峰对它们进行了登记。为了识别杂质,将实验质谱与 NIST 资料库中的数据和文献中已知的数据进行了比较。有关 SiCl4 杂质成分的信息已得到扩展。其中包括永久性气体、脂肪族和含氯碳氢化合物、元素的氯化物、含硫物质和有机硅化合物。共鉴定出 30 种化合物,其中 19 种是首次发现。获得并描述了文献中没有的 C2H6Cl4OSi2 的质谱。首次获得了同位素富集四氯化硅杂质成分的数据。对所研究样品的杂质组成进行了比较分析,并确定了每种样品特有的杂质。研究中获得的数据可用于开发四氯化硅深度提纯技术和生产企业对四氯化硅的表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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