Traceable localization enables accurate integration of quantum emitters and photonic structures with high yield

Craig R. Copeland, Adam L. Pintar, Ronald G. Dixson, Ashish Chanana, Kartik Srinivasan, Daron A. Westly, B. Robert Ilic, Marcelo I. Davanco, and Samuel M. Stavis
{"title":"Traceable localization enables accurate integration of quantum emitters and photonic structures with high yield","authors":"Craig R. Copeland, Adam L. Pintar, Ronald G. Dixson, Ashish Chanana, Kartik Srinivasan, Daron A. Westly, B. Robert Ilic, Marcelo I. Davanco, and Samuel M. Stavis","doi":"10.1364/opticaq.502464","DOIUrl":null,"url":null,"abstract":"In a popular integration process for quantum information technologies, localization microscopy of quantum emitters guides lithographic placement of photonic structures. However, a complex coupling of microscopy and lithography errors degrades registration accuracy, severely limiting device performance and process yield. We introduce a methodology to solve this widespread but poorly understood problem. A new foundation of traceable localization enables rapid characterization of lithographic standards and comprehensive calibration of cryogenic microscopes, revealing and correcting latent systematic effects. Of particular concern, we discover that scale factor deviation and complex optical distortion couple to dominate registration errors. These novel results parameterize a process model for integrating quantum dots and bullseye resonators, predicting higher yield by orders of magnitude, depending on the Purcell factor threshold as a quantum performance metric. Our foundational methodology is a key enabler of the lab-to-fab transition of quantum information technologies and has broader implications to cryogenic and correlative microscopy.","PeriodicalId":501828,"journal":{"name":"Optica Quantum","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optica Quantum","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/opticaq.502464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In a popular integration process for quantum information technologies, localization microscopy of quantum emitters guides lithographic placement of photonic structures. However, a complex coupling of microscopy and lithography errors degrades registration accuracy, severely limiting device performance and process yield. We introduce a methodology to solve this widespread but poorly understood problem. A new foundation of traceable localization enables rapid characterization of lithographic standards and comprehensive calibration of cryogenic microscopes, revealing and correcting latent systematic effects. Of particular concern, we discover that scale factor deviation and complex optical distortion couple to dominate registration errors. These novel results parameterize a process model for integrating quantum dots and bullseye resonators, predicting higher yield by orders of magnitude, depending on the Purcell factor threshold as a quantum performance metric. Our foundational methodology is a key enabler of the lab-to-fab transition of quantum information technologies and has broader implications to cryogenic and correlative microscopy.
可追踪定位技术实现了量子发射器和光子结构的高产能精确集成
在量子信息技术流行的集成工艺中,量子发射器的定位显微镜可指导光子结构的光刻放置。然而,显微镜和光刻误差的复杂耦合降低了配准精度,严重限制了器件性能和工艺产量。我们介绍了一种方法来解决这一普遍存在但却鲜为人知的问题。可追踪定位的新基础可实现光刻标准的快速表征和低温显微镜的全面校准,揭示并纠正潜在的系统效应。特别值得关注的是,我们发现比例因子偏差和复杂光学失真共同主导了套准误差。这些新成果为量子点和牛眼谐振器的集成工艺模型提供了参数,根据作为量子性能指标的珀塞尔因子阈值,预测产量将提高几个数量级。我们的基础方法是量子信息技术从实验室向实验室过渡的关键推动因素,对低温显微镜和相关显微镜具有更广泛的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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