Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-03-13 DOI:10.1134/s1063785023900315

A. A. Kitsay, Yu. G. Nosov, A. V. Chikiryaka, V. I. Nikolaev

引用次数: 0

Abstract

The modes of growth of Ga₂O₃ crystals from a solution of gallium oxide in a MoO₃ melt in the process of MoO₃ evaporation at a temperature of 1050°C have been studied. It is shown that at this temperature the Ga₂O₃ crystalline phase is in equilibrium with the MoO₃ melt. As a result of the experiments, single crystals of β-Ga₂O₃ were obtained up to 1.5 mm in cross section. The composition and structure of the crystals were studied by X-ray diffraction and electron microscopy.

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用溶液-熔融法生长 β-Ga2O3 单晶体

摘要在温度为 1050°C 的 MoO3 蒸发过程中，研究了氧化镓溶液在 MoO3 熔体中的 Ga2O3 晶体生长模式。实验表明，在该温度下，Ga2O3 结晶相与 MoO3 熔体处于平衡状态。实验结果表明，β-Ga2O3 单晶的横截面最大可达 1.5 毫米。通过 X 射线衍射和电子显微镜研究了晶体的组成和结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.