M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. V. Nakhimovich, R. A. Saliy, M. Z. Shvarts, N. A. Kalyuzhniy
{"title":"Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell","authors":"M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. V. Nakhimovich, R. A. Saliy, M. Z. Shvarts, N. A. Kalyuzhniy","doi":"10.1134/s1063785023900431","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\n<b>Abstract</b>\n</h3><p>The efficiency of GaInP/GaAs/In<sub><i>x</i></sub>Ga<sub>1 –</sub> <sub><i>x</i></sub>As triple-junction solar cells obtained by replacing (in the widely used “classical” GaInP/GaAs/Ge heterostructure) the lower germanium with In<sub><i>x</i></sub>Ga<sub>1 –</sub> <sub><i>x</i></sub>As subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of In<sub><i>x</i></sub>Ga<sub>1 –</sub> <sub><i>x</i></sub>As subcells with an indium concentration from <i>x</i> <b><i>=</i></b> 0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/In<sub><i>x</i></sub>Ga<sub>1 –</sub> <sub><i>x</i></sub>As solar cells. It has been determined that at <i>x</i> <b><i>=</i></b> 0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs.) in comparison with the “classical” solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":"15 1","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063785023900431","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
The efficiency of GaInP/GaAs/InxGa1 –xAs triple-junction solar cells obtained by replacing (in the widely used “classical” GaInP/GaAs/Ge heterostructure) the lower germanium with InxGa1 –xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of InxGa1 –xAs subcells with an indium concentration from x= 0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/InxGa1 –xAs solar cells. It has been determined that at x= 0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs.) in comparison with the “classical” solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%.
期刊介绍：
Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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