Terahertz Generation in InAs Epitaxial Films

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2023-12-01 DOI:10.1134/s1063785023900595

引用次数: 0

Abstract

We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser’s stability.

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砷化镓外延薄膜中的太赫兹产生

摘要我们介绍了在半绝缘和高掺杂砷化镓基底上合成的 InAs 外延薄膜在飞秒激光脉冲激励下产生太赫兹的研究结果。研究表明，基于生长在高掺杂砷化镓 n 型衬底上的砷化镓外延薄膜的太赫兹发射器与生长在半绝缘砷化镓衬底上的砷化镓薄膜发射器具有相同的太赫兹产生效率，但其光谱分辨率明显更高，这主要取决于光延迟线的参数和飞秒激光的稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.

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