Integrated silicon electron source for high vacuum microelectromechanical system devices

M. Krysztof, Paweł Miera, Paweł Urbański, T. Grzebyk, M. Hausladen, Rupert Schreiner
{"title":"Integrated silicon electron source for high vacuum microelectromechanical system devices","authors":"M. Krysztof, Paweł Miera, Paweł Urbański, T. Grzebyk, M. Hausladen, Rupert Schreiner","doi":"10.1116/6.0003385","DOIUrl":null,"url":null,"abstract":"The article presents the process of developing a silicon electron source designed for high-vacuum microelectromechanical system (HV MEMS) devices, i.e., MEMS electron microscope and MEMS x-ray source. Technological constraints and issues of such an electron source are explained. The transition from emitters made of carbon nanotubes to emitters made of pure silicon is described. Overall, the final electron source consists of a silicon tip emitter and a silicon gate electrode integrated on the same glass substrate. The source generates an electron beam without any carbon nanotube coverage. It generates a high and stable electron current and works after the final bonding process of an HV MEMS device.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"122 24","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The article presents the process of developing a silicon electron source designed for high-vacuum microelectromechanical system (HV MEMS) devices, i.e., MEMS electron microscope and MEMS x-ray source. Technological constraints and issues of such an electron source are explained. The transition from emitters made of carbon nanotubes to emitters made of pure silicon is described. Overall, the final electron source consists of a silicon tip emitter and a silicon gate electrode integrated on the same glass substrate. The source generates an electron beam without any carbon nanotube coverage. It generates a high and stable electron current and works after the final bonding process of an HV MEMS device.
用于高真空微机电系统设备的集成硅电子源
文章介绍了为高真空微机电系统(HV MEMS)设备(即 MEMS 电子显微镜和 MEMS X 射线源)设计的硅电子源的开发过程。本文解释了这种电子源的技术限制和问题。介绍了从碳纳米管发射器到纯硅发射器的转变过程。总之,最终的电子源由集成在同一玻璃基板上的硅尖发射器和硅栅电极组成。该电子源产生的电子束不覆盖任何碳纳米管。它能产生较高且稳定的电子电流,并能在高压微机电系统设备的最终接合过程后工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信