Evidence of cationic antiphase disorder in epitaxial Cu(In,Ga)S2 grown on GaP/Si(001)

IF 2.5 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-02 DOI:10.1002/pssr.202300485

Eugène Bertin, Éric Gautron, Nicolas Barreau, Charles Cornet, Ludovic Arzel, Leo Choubrac, Antoine Létoublon, Sylvie Harel, Rozenn Bernard, Maud Jullien, Rohel Tony, Lionel Assmann, Olivier Durand

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引用次数: 0

Abstract

We present a transmission electron microscopy study of epitaxial Cu(In,Ga)S2 (CIGS) films co‐evaporated on GaP/Si(001), in either Cu‐rich or Cu‐poor conditions. We first unveil the spatial distribution and the orientation of the different phases by means of electron diffraction. From atomically resolved imaging of the CIGS film’s atomic structure, we conclude that different chalcopyrite domains, sharing cation antiphase symmetries of the cation sublattice, coexist in the films. We conceptualize at least three types of cation antiphase boundaries (CAPBs), which does or does not lead to a violation of the octet rule, depending on the propagation direction. Even though we observe that epitaxial CIGS is highly prone to cation antiphase disorder, we find that the growth of CIGS in Cu‐rich conditions leads to a lower density of CAPBs, as compared to Cu‐poor growth conditions. This opens the question of the influence of CAPBs on CIGS electronic properties.This article is protected by copyright. All rights reserved.

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生长在 GaP/Si(001)上的外延铜（In,Ga）S2 中阳离子反相无序的证据

我们通过透射电子显微镜研究了在富铜或贫铜条件下，GaP/Si（001）上共蒸发的外延铜（In,Ga）S2（CIGS）薄膜。我们首先通过电子衍射揭示了不同相的空间分布和取向。通过对 CIGS 薄膜原子结构的原子分辨成像，我们得出结论：不同的黄铜矿畴在薄膜中共存，共享阳离子亚晶格的阳离子反相对称性。我们认为至少存在三种类型的阳离子反相边界（CAPBs），根据传播方向的不同，它们会或不会导致违反八进制规则。尽管我们观察到外延 CIGS 极易出现阳离子反相紊乱，但我们发现与贫铜生长条件相比，在富铜条件下生长 CIGS 会导致较低的 CAPB 密度。这就提出了 CAPB 对 CIGS 电子特性的影响问题。本文受版权保护。

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来源期刊

Physica Status Solidi-Rapid Research Letters 物理-材料科学：综合

CiteScore

5.20

自引率

3.60%

发文量

208

审稿时长

1.4 months

期刊介绍： Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers. The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.