Dependence of Reversible and Irreversible Failures of Semiconductor Devices on the Repetition Rate of Powerful Pulse Electromagnetic Interferences

IF 0.4 4区计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Communications Technology and Electronics Pub Date : 2023-12-01 DOI:10.1134/s1064226923120197

引用次数: 0

Abstract

Mechanisms of reversible and irreversible failures that occur in microwave semiconductor devices, microcircuits, and microprocessors under the impact of powerful electromagnetic pulses, either single or periodic, are analyzed. It is shown that, in microprocessors, failures of both types are generated by the electrothermal instabilities, being developed within negligibly small volumes of a device. The dependences of the threshold energy of failures on the pulse amplitude, duration, and repetition rate are explained. The results of the calculation are consistent with the experimental data.

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半导体器件的可逆和不可逆故障与强脉冲电磁干扰重复率的关系

摘要分析了微波半导体器件、微电路和微处理器在单次或周期性强电磁脉冲影响下发生可逆和不可逆故障的机理。结果表明，在微处理器中，这两种类型的故障都是由电热不稳定性引起的，并在设备可忽略的小体积内产生。故障阈值能量与脉冲振幅、持续时间和重复率的关系得到了解释。计算结果与实验数据一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Communications Technology and Electronics 工程技术-电信学

CiteScore

1.00

自引率

20.00%

发文量

170

审稿时长

10.5 months

期刊介绍： Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.