Effects of edge-localized electron cyclotron current drive on edge-localized mode suppression by resonant magnetic perturbations in DIII-D

Qiming Hu, N. Logan, Qingquan Yu, A. Bortolon
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Abstract

According to recent DIII-D experiments (N.C. Logan et al 2024 Nucl.Fusion 64 014003), injecting edge localized electron cyclotron current drive (ECCD) in the counter-plasma-current (counter-Ip) direction reduces the n = 3 resonant magnetic perturbation (RMP) current threshold for ELM suppression, while co-Ip ECCD during the suppressed ELM phase causes a back transition to ELMing. This paper presents nonlinear two-fluid simulations on the ECCD manipulation of edge magnetic islands induced by RMP using the TM1 code. In the presence of a magnetic island chain at the pedestal-top, co-Ip ECCD is found to decrease the island width and restore the initially degraded pedestal pressure when its radial deposition location is close to the rational surface of the island. With a sufficiently strong co-Ip ECCD current, the RMP-driven magnetic island can be healed, and the pedestal pressure fully recovers to its initial ELMing state. On the contrary, counter-Ip ECCD is found to increase the island width and further reduce the pedestal pressure to levels significantly below the peeling-ballooning-mode limited height, leading to even stationary ELM suppression. These simulations align with the results from DIII-D experiments. However, when multiple magnetic island chains are present at the pedestal-top, the ECCD current experiences substantial broadening, and its effects on the island width and pedestal pressure become negligible. Further simulations reveal that counter-Ip ECCD enhances RMP penetration by lowering the penetration threshold, with the degree of reduction proportional to the amplitude of ECCD current. For the ~1 MW ECCD in DIII-D, the predicted decrease in the RMP penetration threshold for ELM suppression is approximately 20%, consistent with experimental observations. These simulations indicate that edge-localized ECCD can be used to either facilitate RMP ELM suppression or optimize the confinement degradation.
DIII-D 中共振磁扰动对边缘定位电子回旋电流驱动对边缘定位模式抑制的影响
根据最近的DIII-D实验(N.C. Logan et al 2024 Nucl.Fusion 64 014003),在反等离子体电流(counter-Ip)方向注入边缘局部电子回旋电流驱动(ECCD)降低了抑制ELM的n = 3共振磁扰动(RMP)电流阈值,而在抑制ELM阶段的co-Ip ECCD会导致重新过渡到ELM。本文利用 TM1 代码对 RMP 诱导的边缘磁岛 ECCD 操作进行了非线性双流体模拟。在基座顶端存在磁岛链的情况下,当 co-Ip ECCD 的径向沉积位置靠近磁岛的理性表面时,它能减小磁岛宽度并恢复最初退化的基座压力。只要有足够强的 co-Ip ECCD 电流,RMP 驱动的磁岛就能愈合,基底压力也能完全恢复到最初的 ELMing 状态。相反,反Ip ECCD会增加磁岛宽度,进一步将基座压力降低到明显低于剥离-气球模式限制高度的水平,从而导致静态ELM抑制。这些模拟与 DIII-D 实验的结果一致。然而,当基座顶端存在多个磁岛链时,ECCD 电流会发生大幅拓宽,其对磁岛宽度和基座压力的影响变得微不足道。进一步的模拟显示,反Ip ECCD 通过降低穿透阈值来增强 RMP 穿透力,降低的程度与 ECCD 电流的振幅成正比。对于 DIII-D 中的 ~1 MW ECCD,ELM 抑制 RMP 穿透阈值的预测降低率约为 20%,与实验观测结果一致。这些模拟表明,边缘定位的ECCD可用于促进RMP ELM抑制或优化约束退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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