Deposition of Sn-Zr-Se precursor by thermal evaporation and PLD for the synthesis of SnZrSe3 thin films

R. Kondrotas, S. Bereznev, O. Volobujeva, Katri Muska, V. Pakštas, V. Klimas, M. Talaikis, R. Juškėnas, Arūnas Krotkus
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Abstract

Background ABX3 (X=Se, S) chalcogenides are an emerging class of materials for sustainable photovoltaics. Among ABX3 materials, BaZrS3 has gained the highest community interest. BaZrS3 is the wide bandgap absorber (> 1.7 eV) and therefore is intended for application as a top sub-cell in multijunction devices. However, narrow band gap ABX3 compounds have drawn little attention although this could potentially open the path for fabrication of multijunction solar cells based entirely on ABX3 materials. SnZrSe3 is a narrow bandgap semiconductor with an absorption edge located at around 1.0 eV, but there are no reports on the formation of SnZrSe3 thin films thus far. In this work, therefore, we aim to obtain SnZrSe3 thin films by sublimation methods. Methods Thermal evaporation and pulsed laser deposition (PLD) techniques were used to deposit Sn-Zr-Se precursor films. SnZrSe3 powder was synthesized and used as a source material for evaporation and PLD target preparation. Precursor films were deposited by PLD from single-phase and binary selenide targets. Results We found that using SnZrSe3 powder, only SnSe films were deposited under various conditions by thermal evaporation. Precursor films obtained by PLD from single-phase targets were amorphous and comprised SnSe2 and a-Se phases whereas using binary targets crystalline SnSe and a-Se were detected. Thermogravimetric analysis revealed that SnZrSe3 was thermally stable up to 450 °C and afterwards decomposed into SnSe, Se and ZrSe2-x. Conclusions Using methods described in this work, we were not able to achieve congruent sublimation of SnZrSe3 because of the following reasons: (i) upon energetic excitation, SnZrSe3 decomposes into compounds with very different vapour pressure; (ii) inability to substitute O with Se due to very high chemical affinity of Zr and O. Direct sublimation methods are challenging for formation of SnZrSe3 thin films and other techniques, such as co-evaporation should be explored.
利用热蒸发和 PLD 沉积 Sn-Zr-Se 前驱体以合成 SnZrSe3 薄膜
背景 ABX3(X=Se,S)铬化物是一类新兴的可持续光伏材料。在 ABX3 材料中,BaZrS3 最受社会关注。BaZrS3 是宽带隙吸收体(> 1.7 eV),因此可用作多结器件的顶层子电池。然而,窄带隙 ABX3 化合物却很少受到关注,尽管这有可能为制造完全基于 ABX3 材料的多结太阳能电池开辟道路。SnZrSe3 是一种窄带隙半导体,其吸收边在 1.0 eV 左右,但迄今为止还没有关于形成 SnZrSe3 薄膜的报道。因此,在这项工作中,我们旨在通过升华法获得 SnZrSe3 薄膜。方法 采用热蒸发和脉冲激光沉积(PLD)技术沉积 SnZrSe 前驱体薄膜。合成了 SnZrSe3 粉末,并将其用作蒸发和 PLD 靶件制备的源材料。通过 PLD 从单相和二元硒化物靶沉积前驱体薄膜。结果 我们发现,使用 SnZrSe3 粉末,在各种条件下通过热蒸发只能沉积出 SnSe 薄膜。通过 PLD 从单相靶材获得的前驱体薄膜是无定形的,由 SnSe2 和 a-Se 相组成,而使用二元靶材则检测到结晶的 SnSe 和 a-Se。热重分析表明,SnZrSe3 的热稳定性可达 450 ℃,之后分解为 SnSe、Se 和 ZrSe2-x。直接升华法对于 SnZrSe3 薄膜的形成具有挑战性,因此应探索共蒸发等其他技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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