{"title":"Improved performance of H-diamond MOSFETs with ZrO2/Al2O3 gate dielectric stacks deposited by electron beam method","authors":"Fei Wang, Wei Wang, Genqiang Chen, PengHui Yang, Yanfeng Wang, Minghui Zhang, Ruozheng Wang, Wenbo Hu, Hongxing Wang","doi":"10.1016/j.diamond.2024.110905","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":505356,"journal":{"name":"Diamond and Related Materials","volume":"279 ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/j.diamond.2024.110905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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