Reducing Search Space for Halide Perovskites: Comparing New Simple Material Model (NSMM), Coin-Flip, Goldschmidt’s Tolerance Factor Formalism (GTFF), and SPuDS Algorithm
IF 0.7 4区 工程技术Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
{"title":"Reducing Search Space for Halide Perovskites: Comparing New Simple Material Model (NSMM), Coin-Flip, Goldschmidt’s Tolerance Factor Formalism (GTFF), and SPuDS Algorithm","authors":"Steven C. Tidrow","doi":"10.1080/10584587.2023.2296326","DOIUrl":null,"url":null,"abstract":"Halide perovskites are of recent interest for increasing the efficiency of photovoltaic energy conversion devices. The search space for halide perovskites is daunting considering there are over 170...","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"7 1","pages":""},"PeriodicalIF":0.7000,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2296326","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Halide perovskites are of recent interest for increasing the efficiency of photovoltaic energy conversion devices. The search space for halide perovskites is daunting considering there are over 170...
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.