Structural Modification and Dielectric Property of Bi-Doped BaTiO3 (Ba1-xBixTiO3) Ceramics with co-Precipitation Technique

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2024-02-08 DOI:10.1080/10584587.2023.2296318

Yofentina Iriani, Bachtiar Suherman, Dianisa Khoirum Sandi, Fahru Nurosyid, Khairuddin, Erfan Handoko, Didier Faquelle

引用次数: 0

Abstract

Bismuth-doped Barium Titanate ferroelectric ceramics (Ba1-xBixTiO3 at x = 0, 0.05, 0.10, 0.15, and 0.20) were effectively synthesized via co-precipitation. The influences of Bi content on their mic...

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利用共沉淀技术改变掺杂双酚的 BaTiO3（Ba1-xBixTiO3）陶瓷的结构和介电性能

通过共沉淀法有效合成了掺铋钛酸钡铁电陶瓷（Ba1-xBixTiO3，x = 0、0.05、0.10、0.15 和 0.20）。Bi含量对其微观性能的影响...

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.