A Palliotto, Y Wu, A D Rata, A Herklotz, S Zhou, K Dörr, P Muralt, D-S Park
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引用次数: 0
Abstract
Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tailoring emergent material properties and functionalities. Here, we demonstrate an effective approach for creating and controlling ionic defects (oxygen vacancies) in epitaxial Gd-doped CeO2−x (CGO)(001) films grown on Nb:SrTiO3(001) single crystal. Our results exhibit a significant limitation in the formation of excess oxygen vacancies in the films during high-temperature film growth. However, we have discovered that managing the oxygen vacancies in the epitaxial CGO(001) films is feasible using a two-step film growth process. Subsequently, our findings show that manipulating excess oxygen vacancies is a key to the emergence of giant apparent dielectric permittivity (e.g. ε′≈ 106) in the epitaxial films under electrical field control. Overall, the strategy of tuning functional ionic defects in CGO and similar oxides is beneficial for various applications such as electromechanical, sensing, and energy storage applications.
期刊介绍:
The Journal of Physics-Energy is an interdisciplinary and fully open-access publication dedicated to setting the agenda for the identification and dissemination of the most exciting and significant advancements in all realms of energy-related research. Committed to the principles of open science, JPhys Energy is designed to maximize the exchange of knowledge between both established and emerging communities, thereby fostering a collaborative and inclusive environment for the advancement of energy research.