Transcriptomic analysis of developing sorghum grains to detect genes related to cell wall biosynthesis and remodelling.

IF 1.9 Q3 GENETICS & HEREDITY
Camille Costes, Sergi Navarro Sanz, Caroline Calatayud, Alexandre Soriano, Hamza Mameri, Nancy Terrier, Mathilde Francin-Allami
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引用次数: 0

Abstract

Objective: Sorghum (Sorghum bicolor (L.) Moench) is the fifth most important grain produced in the world. Interest for cultivating sorghum is increasing all over the world in the context of climate change, due to its low input and water requirements. Like other cultivated cereals, sorghum has significant nutritional value thanks to its protein, carbohydrate and dietary fiber content, these latter mainly consisting of cell wall polysaccharides. This work describes for the first time a transcriptomic analysis dedicated to identify the genes involved in the biosynthesis and remodelling of cell walls both in the endosperm and outer layers of sorghum grain during its development. Further analysis of these transcriptomic data will improve our understanding of cell wall assembly, which is a key component of grain quality.

Data description: This research delineates the steps of our analysis, starting with the cultivation conditions and the grain harvest at different stages of development, followed by the laser microdissection applied to separate the endosperm from the outer layers. It also describes the procedures implemented to generate RNA libraries and to obtain a normalized and filtered table of transcript counts, and finally determine the number of putative cell wall-related genes already listed in literature.

对发育中的高粱籽粒进行转录组分析,检测与细胞壁生物合成和重塑有关的基因。
目的:高粱(Sorghum bicolor (L.) Moench)是世界第五大粮食作物。在气候变化的背景下,世界各地对高粱的种植兴趣与日俱增。与其他栽培谷物一样,高粱的蛋白质、碳水化合物和膳食纤维含量也很高,其中膳食纤维主要由细胞壁多糖组成,因而具有重要的营养价值。这项工作首次描述了转录组分析,旨在确定高粱籽粒发育过程中胚乳和外层细胞壁的生物合成和重塑所涉及的基因。对这些转录组数据的进一步分析将增进我们对细胞壁组装的了解,而细胞壁组装是谷物品质的关键组成部分:本研究描述了我们的分析步骤,首先是不同发育阶段的栽培条件和谷物收获,然后是用于分离胚乳和外层的激光显微切割。它还描述了生成 RNA 文库、获得规范化和过滤的转录本计数表以及最后确定已在文献中列出的推测细胞壁相关基因数量的过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
4.90
自引率
0.00%
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