Demonstration of transfer learning using 14 nm technology analog ReRAM array

IF 1.9 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
F. F. Athena, Omobayode Fagbohungbe, Nanbo Gong, M. Rasch, Jimmy Penaloza, SoonCheon Seo, Arthur R Gasasira, P. Solomon, Valeria Bragaglia, S. Consiglio, H. Higuchi, Chanro Park, K. Brew, Paul Jamison, C. Catano, Iqbal Saraf, Claire Silvestre, Xuefeng Liu, Babar Khan, Nikhil Jain, Steven McDermott, Rick Johnson, I. Estrada-Raygoza, Juntao Li, T. Gokmen, Ning Li, Ruturaj Pujari, Fabio Carta, H. Miyazoe, Martin M. Frank, Antonio La Porta, D. Koty, Qingyun Yang, R. Clark, K. Tapily, C. Wajda, A. Mosden, Jeff Shearer, Andrew Metz, S. Teehan, N. Saulnier, B. Offrein, T. Tsunomura, G. Leusink, Vijay Narayanan, Takashi Ando
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Abstract

Analog memory presents a promising solution in the face of the growing demand for energy-efficient artificial intelligence (AI) at the edge. In this study, we demonstrate efficient deep neural network transfer learning utilizing hardware and algorithm co-optimization in an analog resistive random-access memory (ReRAM) array. For the first time, we illustrate that in open-loop deep neural network (DNN) transfer learning for image classification tasks, convergence rates can be accelerated by approximately 3.5 times through the utilization of co-optimized analog ReRAM hardware and the hardware-aware Tiki-Taka v2 (TTv2) algorithm. A simulation based on statistical 14 nm CMOS ReRAM array data provides insights into the performance of transfer learning on larger network workloads, exhibiting notable improvement over conventional training with random initialization. This study shows that analog DNN transfer learning using an optimized ReRAM array can achieve faster convergence with a smaller dataset compared to training from scratch, thus augmenting AI capability at the edge.
利用 14 纳米技术模拟 ReRAM 阵列演示迁移学习
面对日益增长的边缘高能效人工智能(AI)需求,模拟存储器提供了一种前景广阔的解决方案。在本研究中,我们利用模拟电阻式随机存取存储器(ReRAM)阵列中的硬件和算法协同优化,展示了高效的深度神经网络转移学习。我们首次证明,在用于图像分类任务的开环深度神经网络(DNN)迁移学习中,通过利用共同优化的模拟 ReRAM 硬件和硬件感知 Tiki-Taka v2 (TTv2) 算法,收敛速度可加快约 3.5 倍。基于 14 nm CMOS ReRAM 阵列数据统计的仿真深入揭示了迁移学习在更大网络工作负载上的性能,与采用随机初始化的传统训练相比,迁移学习的性能有了显著提高。这项研究表明,与从头开始训练相比,使用优化 ReRAM 阵列的模拟 DNN 转移学习能以更小的数据集实现更快的收敛,从而增强边缘人工智能能力。
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