Design of Low Power Analog/RF Signal Processing Circuits Using 22 nm Silicon-on-Insulator Schottky Barrier Nano-Wire MOSFET

Abstract

The gate-all-around (GAA) silicon-on-insulator (SOI) Schottky barrier (SB) nano-wire (NW) MOSFET was recently proposed for low-power and high-frequency analog and radio frequency (RF) circuits. But their use in low-power and high-frequency analog/RF circuits is still under investigation. In this work, basic analog signal processing circuits using gate-all-around SOI-SB-NW MOSFETs are designed for low-power and high-frequency applications. These basic and necessary analog processing circuits are designed for ± 0.3 V and ± 0.25 V power supplies to work on frequencies up to 10 GHz. The analog/RF characteristics of the GAA SOI-SB MOSFET are compared with those of the GAA SB NW MOSFET. The SOI-SB NW MOSFET shows improvements in early voltage, output resistance, and transconductance generation factor. The Silvaco TCAD simulator is used to obtain the results and perform numerical simulations. Simulation results show good analog/RF performance of the analog processing circuits.