Sibel Özcan, Aurelio Jesus Gallardo Caparros, B. Biel
{"title":"Point-like vacancies in Two-Dimensional Transition Metal Dichalcogenides","authors":"Sibel Özcan, Aurelio Jesus Gallardo Caparros, B. Biel","doi":"10.1088/2516-1075/ad2090","DOIUrl":null,"url":null,"abstract":"\n This study explores the realm of two-dimensional Transition Metal Dichalcogenides (TMDs), examining some of the most prevalent defects. Employing Density Functional Theory (DFT), we scrutinize three common defect types across four extensively studied TMDs: MoS2, MoSe2, WS2, and WSe2. Our investigation spans the energetics of these defects, unveiling the most stable ones, and unraveling the alterations in structural and electronic properties induced by their presence. As a further step towards practical applications, we simulate the images that would be captured by both Atomic and Kelvin Probe Force Microscopes, aiming at a facile identification of these defects when probed at the microscopic level.","PeriodicalId":502740,"journal":{"name":"Electronic Structure","volume":"5 33","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Structure","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2516-1075/ad2090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This study explores the realm of two-dimensional Transition Metal Dichalcogenides (TMDs), examining some of the most prevalent defects. Employing Density Functional Theory (DFT), we scrutinize three common defect types across four extensively studied TMDs: MoS2, MoSe2, WS2, and WSe2. Our investigation spans the energetics of these defects, unveiling the most stable ones, and unraveling the alterations in structural and electronic properties induced by their presence. As a further step towards practical applications, we simulate the images that would be captured by both Atomic and Kelvin Probe Force Microscopes, aiming at a facile identification of these defects when probed at the microscopic level.