{"title":"A hybrid plasma model for Cr thin film deposition by deep oscillation magnetron sputtering","authors":"J. Y. Gao, F. Ferreira, M. K. Lei","doi":"10.1063/5.0179553","DOIUrl":null,"url":null,"abstract":"A time-dependent hybrid plasma model composed of a zero-dimensional global model and a two-dimensional fluid model is proposed for simulation of plasma chemistry and transportation of plasma during Cr thin film deposition by deep oscillation magnetron sputtering (DOMS). The global model deals with plasma reactions in the ionization region near the target with discharge voltage and current waveforms as inputs. The temporal plasma characteristics calculated by the global model are utilized as a boundary condition for the two-dimensional fluid model to simulate high-density plasma transportation in the diffusion region through the entire macropulse period. The full momentum equation taking inertia force into consideration is applied for ion momentum conservation in the fluid model instead of using the drift-diffusion approximation, which ensures validity of the simulation for low-pressure plasmas. The deposition flux as well as the kinetic and potential energy fluxes transferred to the growing films are calculated by the hybrid model. Microstructure evolution of the DOMS deposited Cr thin films from zone I to zone T is attributed to the growing kinetic and potential energies as the charging voltage increases according to the structure zone diagram. The deposition rate loss in DOMS is explained by the back attraction effect, sputtering yield effect, and densification of the films.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"44 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0179553","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
A time-dependent hybrid plasma model composed of a zero-dimensional global model and a two-dimensional fluid model is proposed for simulation of plasma chemistry and transportation of plasma during Cr thin film deposition by deep oscillation magnetron sputtering (DOMS). The global model deals with plasma reactions in the ionization region near the target with discharge voltage and current waveforms as inputs. The temporal plasma characteristics calculated by the global model are utilized as a boundary condition for the two-dimensional fluid model to simulate high-density plasma transportation in the diffusion region through the entire macropulse period. The full momentum equation taking inertia force into consideration is applied for ion momentum conservation in the fluid model instead of using the drift-diffusion approximation, which ensures validity of the simulation for low-pressure plasmas. The deposition flux as well as the kinetic and potential energy fluxes transferred to the growing films are calculated by the hybrid model. Microstructure evolution of the DOMS deposited Cr thin films from zone I to zone T is attributed to the growing kinetic and potential energies as the charging voltage increases according to the structure zone diagram. The deposition rate loss in DOMS is explained by the back attraction effect, sputtering yield effect, and densification of the films.
提出了一种由零维全局模型和二维流体模型组成的随时间变化的混合等离子体模型,用于模拟深振荡磁控溅射(DOMS)沉积 Cr 薄膜过程中的等离子体化学反应和等离子体传输。全局模型以放电电压和电流波形为输入,处理目标附近电离区的等离子体反应。全局模型计算出的等离子体时间特性被用作二维流体模型的边界条件,以模拟整个大脉冲期间扩散区的高密度等离子体传输。流体模型中的离子动量守恒采用了考虑惯性力的全动量方程,而不是使用漂移-扩散近似,这确保了模拟对低压等离子体的有效性。混合模型计算了沉积通量以及转移到生长薄膜上的动能和势能通量。根据结构分区图,随着充电电压的增加,DOMS 沉积铬薄膜从 I 区到 T 区的微观结构演变归因于动能和势能的增长。DOMS 的沉积速率损失可通过反向吸引效应、溅射产量效应和薄膜致密化来解释。
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces