Effect of Noise on Resistive Switching of an Yttria Stabilized Zirconia Based Memristor

Abstract

The effect of Gaussian noise on the switching of a ZrO₂(Y) based memristor from the low resistance state (LRS) into the high resistance state (HRS) including transitions from the LRS into intermediate metastable states has been studied. The series of positive (with addition of the noise signal or without the one) and negative rectangular voltage pulses were used as the switching signals. The adding of noise to the switching signal initiated the switching of the memristor from the LRS into the HRS at smaller pulse magnitudes than in the case of switching by the rectangular pulses without adding the noise. A necessary (preset) HRS can be achieved passing the intermediate states by adding the noise with certain parameters to the rectangular switching pulses. The resistive switching is performed without application of adaptive switching protocols. The results of the present study can be applied in the development of innovative memristor switching protocols.