Monte Carlo random walk simulation of transient absorption kinetics using reflectance and absorption of electrons at Au/TiO2 nanoparticle boundaries

Junli Wang, Akihiro Furube
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Abstract

To understand plasmon-induced charge-transfer mechanisms between a photo-excited gold (Au) nanoparticle and a TiO2 nanoparticle, a Monte Carlo random walk (MCRW) simulation was applied to reproduce the charge recombination kinetics in the nanocrystalline (Au/TiO[Formula: see text] assemblies reported previously based on transient absorption spectroscopy. The Au/TiO2 assemblies consist of a confined electron diffusion space within a tiny TiO2 nanoparticle, making it possible to study electron diffusion transport through MCRW simulation. In this simulation algorithm, the electron diffusion starts at the coordinate origin of a rectangle, and the next direction of movement is obtained by calculating the coordinate matrix and random offset so that the electron is reflected on three boundaries and absorbed when it reaches the other boundary. By simulation programming, the histogram which indicates the occurrence frequency of the step accumulation number up to the right boundary was obtained. From 100 to 100000 steps under condition of 10000 iteration, that is, changing the steps but keeping the iteration times to ensure that all particles experience absorption in the simulation. Comparing the trace of 106 particles position with that of 104 under 1000 simulations, the electron density was found to saturate other than the region near the right boundary, where electrons disappear by the absorption process during the electron diffusion process. Finally, by fitting curves, it is confirmed that the tendency of the simulated response reproduced the transient absorption kinetics.
利用金/二氧化钛纳米粒子边界的电子反射和吸收对瞬态吸收动力学进行蒙特卡罗随机游走模拟
为了了解光激发金(Au)纳米粒子和二氧化钛(TiO2)纳米粒子之间的等离子体诱导电荷转移机制,我们应用蒙特卡罗随机漫步(MCRW)模拟再现了之前根据瞬态吸收光谱报道的纳米晶(Au/TiO[式:见正文]组装体)中的电荷重组动力学。金/二氧化钛组装体由微小的二氧化钛纳米粒子内的封闭电子扩散空间组成,这使得通过 MCRW 仿真研究电子扩散传输成为可能。在这种模拟算法中,电子扩散从矩形的坐标原点开始,通过计算坐标矩阵和随机偏移获得下一个运动方向,从而使电子在三条边界上反射,到达另一条边界时被吸收。通过模拟编程,得到了表示右边界前的步累积数出现频率的直方图。在 10000 次迭代的条件下,从 100 步到 100000 步,即改变步数但保持迭代次数,以确保所有粒子在模拟中都经历吸收。将 106 个粒子的位置轨迹与 1000 次模拟下 104 个粒子的位置轨迹进行比较,发现除了右边界附近的区域,电子密度趋于饱和,因为在电子扩散过程中,电子在该区域被吸收而消失。最后,通过拟合曲线,证实模拟响应的趋势再现了瞬态吸收动力学。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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