Rational engineering of semiconductor-based photoanodes for photoelectrochemical cathodic protection

IF 6.1 Q2 CHEMISTRY, PHYSICAL
Xiangyan Chen, Shaopeng Wang, Shaohua Shen
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Abstract

Photoelectrochemical (PEC) cathodic protection based on semiconductor photoanodes, by combining solar energy utilization and metal anticorrosion, provides a promising platform for developing an environmentally friendly metal protection technology. In this context, semiconductors (e.g., TiO2, ZnO, SrTiO3, BiVO4, and g-C3N4), with merits of suitable band structure, good chemical stability, and low cost, have attracted extensive attention among the investigated photoanode candidates. However, the poor optical absorption properties and the high photogenerated charge recombination rate severely limit their photocathodic protection performances. In order to break these limitations, different modification strategies for these photoanodes have been developed toward the significant enhancement in PEC cathodic protection properties. In this Review, the rational engineering of semiconductor-based photoanodes, including nanostructure design, elemental doping, defect engineering, and heterostructure construction, has been overviewed to introduce the recent advances for PEC cathodic protection. This Review aims to provide fundamental references and principles for the design and fabrication of highly efficient semiconductor photoanodes for PEC cathodic protection of metals.
用于光电化学阴极保护的半导体光阳极的合理工程设计
基于半导体光阳极的光电化学(PEC)阴极保护技术将太阳能利用与金属防腐相结合,为开发环境友好型金属保护技术提供了一个前景广阔的平台。在这方面,半导体(如 TiO2、ZnO、SrTiO3、BiVO4 和 g-C3N4)具有合适的能带结构、良好的化学稳定性和低成本等优点,在候选光阳极中引起了广泛关注。然而,较差的光吸收特性和较高的光生电荷重组率严重限制了它们的光阴极保护性能。为了打破这些限制,人们对这些光阳极采用了不同的改性策略,以显著提高其光电阴极保护性能。本综述概述了基于半导体的光阳极的合理工程,包括纳米结构设计、元素掺杂、缺陷工程和异质结构构建,并介绍了 PEC 阴极保护的最新进展。本综述旨在为设计和制造用于 PEC 阴极保护金属的高效半导体光阳极提供基本参考和原理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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