A study of the efficient approach to introduce two Na ions into a NaVOPO4 matrix and an analysis of the electrochemical performance of NaVOPO4/Na2V(PO4)2

IF 1 4区 材料科学
A. Neelaveni, N. Sivakumar
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引用次数: 0

Abstract

In this work, we manufacture NaVOPO4 with the addition of one additional Na ion to enhance the stability and electrochemical formulation utilizing three ways, including sol gel-assisted hydrothermal, pure sol-gel, and solid state reaction methods. The sol-gel aided hydrothermal approach is the most effective way to add more Na ions to the NaVOPO4 matrix out of the three. Due to the presence of carbon content in high temperatures, the alterations of oxygen environment (O (1 &2) sites around the Na and V cause NaVOPO4/ Na2V(PO4)2 (NVP). The traces with high intensity at 17.99o indicates the tetragonal phase of Na2V(PO4)2 in NaVOPO4 and it is concreted by Raman analysis by peak shifting from 884 to 866 cm–1 . The character in Na2V(PO4)2 influences the Na ion intercalation process and yields the specific capacity in a three-electrode system is 0.83mAh/g at the scan rate of 10mV/s.
研究将两个 Na 离子引入 NaVOPO4 基质的有效方法,并分析 NaVOPO4/Na2V(PO4)2 的电化学性能
在这项工作中,我们利用溶胶凝胶辅助水热法、纯溶胶凝胶法和固态反应法等三种方法,在制造 NaVOPO4 时添加了一个额外的 Na 离子,以增强其稳定性和电化学配方。在这三种方法中,溶胶凝胶辅助水热法是在 NaVOPO4 基体中添加更多 Na 离子的最有效方法。由于高温下碳含量的存在,Na 和 V 周围的氧环境(O (1 & 2) 位点)发生了变化,导致 NaVOPO4/ Na2V(PO4)2 (NVP)。17.99o 处的高强度迹线表明 NaVOPO4 中的 Na2V(PO4)2 为四方相,拉曼分析通过峰值从 884 cm-1 移动到 866 cm-1 证实了这一点。Na2V(PO4)2 中的特性影响了 Na 离子的插层过程,在扫描速率为 10mV/s 的三电极系统中产生的比容量为 0.83mAh/g。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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