Support of Cd doping in SnO2 nanoparticles to enhance its thermoelectric parameters

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-11-01 DOI:10.15251/jor.2023.196.653

N. U. Rehman, A. Hussain, S. M. Ali, J. Ahmad, S. A. Buzdar, K. Mahmood, Z. A. Shah, S. D. Ali, M. A. Shar

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Abstract

In the present study we have successfully synthesized undoped and Cd doped SnO2 nanoparticles using the Sol-gel method with different concentrations of Cd solutions, and Seebeck coefficient and electrical conductivity have been reported at various temperatures. The structural, morphological, thermoelectric and electrical properties of undoped and doped samples were by XRD, scanning electron microscopy, Raman spectroscopy, Seebeck effect and two point probe electrical measurement. XRD show the rutile tetragonal structure and the enhanced particle size in the range of 18.12 nm to 25.08 nm, and Raman active mode at 479cm-1 , 632cm-1 and 775cm-1 were measured by Raman spectroscopy. Morphology of the nanoparticles by using Scanning electron microscopy have revealed the random spherical shape and cluster formation of these nanoparticles. The maximum value of seebeck coefficient, electrical conductivity and power factor for 6% doped SnO2 samples were found to be -297.92μV/°C, 33.33Ω-1 m-1 and 0.129117 x 106 Wm-1 /°C2 , respectively. These results reveal that the Cd doped tin dioxide (SnO2) nanoparticles can be used as a good candidate for thermoelectric applications.

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支持在二氧化锡纳米粒子中掺杂镉以提高其热电参数

在本研究中，我们采用溶胶凝胶法成功合成了未掺杂和掺杂镉的二氧化锡纳米粒子，并报告了不同温度下的塞贝克系数和电导率。通过 XRD、扫描电子显微镜、拉曼光谱、塞贝克效应和两点探针电学测量，研究了未掺杂和掺杂样品的结构、形态、热电性能和电学性能。XRD 显示了金红石四方结构，粒度在 18.12 nm 至 25.08 nm 范围内增大，拉曼光谱测量了 479cm-1、632cm-1 和 775cm-1 处的拉曼活性模式。使用扫描电子显微镜观察纳米粒子的形态，发现这些纳米粒子呈随机球形，并形成了团簇。6% 掺杂 SnO2 样品的泽贝克系数、电导率和功率因数的最大值分别为 -297.92μV/°C、33.33Ω-1 m-1 和 0.129117 x 106 Wm-1 /°C2。这些结果表明，掺镉二氧化锡（SnO2）纳米粒子可作为热电应用的良好候选材料。

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.