Large-area single-crystal hexagonal boron nitride: From growth mechanism to potential applications

Joo Song Lee, Nilanjan Basu, Hyeon Suk Shin
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Abstract

To date, chemical vapor deposition has been employed to grow large-area polycrystalline (PC) films of hexagonal boron nitride (hBN). However, PC hBN thin films exhibit abundant grain boundaries, small grain sizes, and structural imperfections, which collectively degrade the performance as well as hinder the scalability and potential applications of hBN films. Recently, demonstrated deposition methods for growing large-area single-crystalline (SC) hBN films can break through these bottlenecks and have opened avenues for new opportunities. Large-area SC hBN films outperform their PC counterparts owing to the presence of fewer grain boundaries and a more homogeneous surface morphology. This review article presents a consolidated overview of the growth mechanisms of SC hBN films and role of metal catalysts (substrates) in the growth process. Applications, in which SC hBN outperforms PC hBN as well as the potential applications of SC hBN, are also discussed.
大面积单晶六方氮化硼:从生长机制到潜在应用
迄今为止,人们一直采用化学气相沉积法来生长大面积的六方氮化硼(hBN)多晶(PC)薄膜。然而,PC hBN 薄膜表现出大量晶界、小晶粒尺寸和结构缺陷,这些因素共同降低了 hBN 薄膜的性能,阻碍了其可扩展性和潜在应用。最近,用于生长大面积单晶(SC)hBN 薄膜的沉积方法得到证实,可以突破这些瓶颈,为新的机遇开辟了道路。由于存在较少的晶界和更均匀的表面形态,大面积 SC hBN 薄膜的性能优于 PC 薄膜。这篇综述文章综合概述了 SC hBN 薄膜的生长机制以及金属催化剂(基底)在生长过程中的作用。文章还讨论了在哪些应用中 SC 氢溴萘优于 PC 氢溴萘以及 SC 氢溴萘的潜在应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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