{"title":"The Discovery of the Universal Mass-Energy Equivalence Relation in Materials Having a Bandgap","authors":"D. R. K. Chanana","doi":"10.14738/tecs.116.15906","DOIUrl":null,"url":null,"abstract":": This article describes how the discovery of the universal mass-energy equivalence relation came about and tabulates the possible high, medium and low voltage Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) from different semiconductors which could be n-channel or p-channel devices. Some points are to be considered for the tabulated MOSFETs which are enlisted. The universal mass-energy equivalence relation is dE/E = dm/m, where E is the energy and m is the mass.","PeriodicalId":119801,"journal":{"name":"Transactions on Machine Learning and Artificial Intelligence","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions on Machine Learning and Artificial Intelligence","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14738/tecs.116.15906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
: This article describes how the discovery of the universal mass-energy equivalence relation came about and tabulates the possible high, medium and low voltage Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) from different semiconductors which could be n-channel or p-channel devices. Some points are to be considered for the tabulated MOSFETs which are enlisted. The universal mass-energy equivalence relation is dE/E = dm/m, where E is the energy and m is the mass.
:这篇文章介绍了普遍质能方程关系的发现过程,并以表格形式列出了不同半导体的高、中、低压金属氧化物半导体场效应晶体管(MOSFET),这些器件可以是 n 沟道器件,也可以是 p 沟道器件。表中列出的 MOSFET 需要考虑一些要点。通用的质能等价关系为 dE/E = dm/m,其中 E 为能量,m 为质量。